HL6336G datasheet, PDF - EEWORLD Datasheet

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HL6336G: Description635 nm, LASER DIODE, LD/G2, 3 PIN; CategoryLED optoelectronic/LED photoelectric; File Size38KB，5 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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HL6336G Overview

635 nm, LASER DIODE, LD/G2, 3 PIN

HL6336G Parametric

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
package instruction	LD/G2, 3 PIN
Reach Compliance Code	compliant
Configuration	SINGLE WITH BUILT-IN PHOTO DIODE
Number of functions	1
Maximum operating temperature	50 °C
Minimum operating temperature	-10 °C
Optoelectronic device types	LASER DIODE
Nominal output power	5 mW
peak wavelength	635 nm
shape	ROUND
size	2 mm
Maximum threshold current	30 mA
Base Number Matches	1

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HL6335G/36G

Circular Beam Low Operating Current

ADE-208-1419A (Z)

Rev.1

Jul. 2001

Description

The HL6335/36G are 0.63

µm

band AlGaInP laser diodes can be operated with low operating current. It

provides circular beam by its unigue active layer structure. It is suitable as a light source for laser levelers,

laser scanners and optical equipment for measurement.

Application

•

Laser leveler

•

Laser scanner

•

Measurement

Features

•

Optical output power

•

Low aspect ratio

: 5 mW CW

: 1.2 Typ (almost circular beam)

•

Low operating current : 25 mA Typ

•

Operating temperature : +50°C

Package Type

•

HL6335/36G: G2

Internal Circuit

•

HL6335G

Internal Circuit

•

HL6336G

HL6335G/36G

Disclaimer

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The

laser beam shall be observed or adjusted through infrared camera or equivalent.

Rev.1, Jul. 2001, page 4 of 5

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