NTE5600 thru NTE5607
TRIAC, 4 Amp
Description:
The NTE5600 through NTE5607 TRIACs are designed primarily for full–wave AC control applications
such as light dimmers, motor controls, heating controls and power supplies; or wherever full–wave
silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from a blocking
to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.
Features:
D
2 Mode Gate Triggering
D
Blocking Voltages to 600V
D
All Diffused and Glass Passivated Junctions for Greater Parameters Uniformity and Stability
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (T
C
= +110°C, Note 1), V
DRM
NTE5600 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
NTE5601 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5602 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5603 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5604 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
NTE5605 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5606 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5607 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (T
C
= +85°C), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak Surge Current (One Full Cycle, 60Hz, T
J
= –40° to +110°C), I
TSM
. . . . . . . . . . . . . . . . . . . 30A
Circuit Fusing (t = 8.3ms), I
2
t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7A
2
s
Peak Gate Power, P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Average Gate Power, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Peak Gate Voltage, V
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +110°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5°C/W
Thermal Resistance, Junction–to–Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Mounting Torque (6–32 Screw, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 in. lb.
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated block-
ing voltage.
Note 2. Torque rating applies with the use of a compression washer. Mounting torque in excess of
8 in. lb. does not appreciably lower case–to–sink thermal resistance. MT
2
and heatsink con-
tact pad are common.
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
Peak Forward or Reverse
Blocking Current
Symbol
I
DRM
,
I
RRM
Test Conditions
Rated V
DRM
or V
RRM
, Gate Open,
T
J
= +25°C
Rated V
DRM
or V
RRM
, Gate Open,
T
J
= +110°C
On–State Voltage (Either Direction)
Peak Gate Trigger Voltage
MT
2
(+), G (+); MT
2
(–), G (–)
MT
2
(+), G (–); MT
2
(–), G (+)
Peak Gate Trigger Voltage
MT
2
(+), G (+); MT
2
(–), G (–)
MT
2
(+), G (–); MT
2
(–), G (+)
Holding Current (Either Direction)
V
TM
V
GT
I
TM
= 6A Peak
Main Terminal Voltage = 12V,
R
L
= 100Ω, T
J
= –40°C
Main Terminal Voltage = Rated V
DRM
,
R
L
= 10kΩ, T
J
= +110°C
Main Terminal Voltage = 12V, Gate Open,
T
J
= –40°C, Initiating Current = 1A
Main Terminal Voltage = 12V, Gate Open,
T
J
= +25°C
Turn–On Time (Either Direction)
Blocking Voltage Application
Rate at Commutation
Gate Trigger Current
Quads I & III
t
on
dv/dt
I
GT
I
TM
= 14A, I
GT
= 100mA
Rated V
DRM
, Gate Open, T
J
= +85°C
Main Terminal Voltage = 12V,
R
L
= 100Ω, T
J
= +25°C
Main Terminal Voltage = 12V,
R
L
= 100Ω, T
J
= –40°C
.330 (8.38)
Max
.175
(4.45)
Max
Min
–
–
–
–
Typ
–
–
–
1.4
Max
10
2
2
2.5
Unit
µA
mA
V
V
V
GT
0.2
–
–
–
–
–
–
–
–
–
1.5
5
–
–
–
70
30
–
–
30
60
V
mA
mA
µs
V/µs
mA
mA
I
H
.450
(11.4)
Max
.118 (3.0)
Dia
.655
(16.6)
Max
.030 (.762) Dia
MT
1
MT
2
G
.090 (2.28)
.130 (3.3)
Max
NXP MCU
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