BAS86
New Product
Vishay Semiconductors
formerly General Semiconductor
Schottky Diode
MiniMELF (SOD-80C)
Features
• For general purpose applications
• This diode features low turn-on voltage. The
devices are protected by a PN junction guard ring
against excessive voltage, such as electrostatic
discharges.
• Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• This diode is also available in a DO-35 case with
type designation BAT86.
Cathode Band
.063 (1.6)
Dia.
.051 (1.3)
.146 (3.7)
.130 (3.3)
.019 (0.48)
.011 (0.28)
Dimensions in inches and (millimeters)
Mechanical Data
Case:
MiniMELF Glass Case (SOD-80C)
Weight:
approx. 0.05g
Cathode Band Color:
Green
Packaging Codes/Options:
D1/10K per 13” reel (8mm tape), 20K/box
D2/2.5K per 7” reel (8mm tape), 20K/box
Maximum Ratings and Thermal Characteristics
Parameter
Continuous Reverse Voltage
Forward Continuous Current at T
amb
= 25°C
Repetitive Forward Current at t
p
< 1s,
υ ≤
0.5, T
amb
= 25°C
Power Dissipation at T
amb
= 25°C
Thermal Resistance Junction to Ambiant Air
Junction Temperature
Ambient Operating Temperature Range
Storage Temperature Range
Note:
(1) Valid provided that electrodes are kept at ambient temperature.
(T
A
= 25°C unless otherwise noted)
Symbol
V
R
I
F
I
FRM
P
tot
R
θJA
T
j
T
amb
T
S
Value
50
200
(1)
500
(1)
200
(1)
300
(1)
125
–65 to +125
–65 to +150
Unit
V
mA
mA
mW
°C/W
°C
°C
°C
Document Number 88132
10-May-02
www.vishay.com
1
BAS86
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Parameter
Reverse Breakdown Voltage
Leakage Current
J
= 25°C unless otherwise noted)
Symbol
V
(BR)R
I
R
Test Condition
I
R =
10µA (pulsed)
V
R
= 25V
PulseTest tp < 300µs,
δ
< 2%
I
F
= 0.1mA
I
F
= 1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
V
R
= 1V, f = 1MHz
I
F
= 10mA, I
R =
10mA
I
R
= 1mA
Min
50
—
—
—
—
—
—
—
—
Typ
—
0.2
0.200
0.275
0.365
0.460
0.700
—
—
Max
—
0.5
0.300
0.380
0.450
0.600
0.900
8
5
Unit
V
µA
Forward Voltage
V
F
V
Capacitance
Reverse Recovery Time
C
tot
t
rr
pF
ns
www.vishay.com
2
Document Number 88132
10-May-02