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2N1595

Description
SILICON CONTROLLED RECTIFIER,50V V(DRM),1.6A I(T),TO-5
CategoryAnalog mixed-signal IC    Trigger device   
File Size114KB,2 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

2N1595 Overview

SILICON CONTROLLED RECTIFIER,50V V(DRM),1.6A I(T),TO-5

2N1595 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknown
Nominal circuit commutation break time10 µs
Maximum DC gate trigger current10 mA
Maximum DC gate trigger voltage3 V
JESD-609 codee0
Maximum leakage current6 mA
On-state non-repetitive peak current15 A
Maximum on-state voltage2 V
Maximum on-state current1600 A
Maximum operating temperature125 °C
Minimum operating temperature-60 °C
Off-state repetitive peak voltage50 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeSCR
Base Number Matches1

2N1595 Related Products

2N1595
Description SILICON CONTROLLED RECTIFIER,50V V(DRM),1.6A I(T),TO-5
Is it Rohs certified? incompatible
Maker NXP
package instruction CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknown
Nominal circuit commutation break time 10 µs
Maximum DC gate trigger current 10 mA
Maximum DC gate trigger voltage 3 V
JESD-609 code e0
Maximum leakage current 6 mA
On-state non-repetitive peak current 15 A
Maximum on-state voltage 2 V
Maximum on-state current 1600 A
Maximum operating temperature 125 °C
Minimum operating temperature -60 °C
Off-state repetitive peak voltage 50 V
surface mount NO
Terminal surface Tin/Lead (Sn/Pb)
Trigger device type SCR
Base Number Matches 1
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