5STR 07F2541
5STR 07F2541
Old part no. TP 918F-675-25
Reverse Conducting Thyristor
Properties
§
§
Integrated freewheeling diode
Optimized for low dynamic losses
Applications
•
Traction
Key Parameters
V
DRM
=
I
TAVm
=
I
TSM
=
V
TO
=
r
T
=
t
q
=
2500
760
14 000
1.391
0.336
40
V
A
A
V
mΩ
µs
Types
V
DRM
5STR 07F2541..2550
5STR 07F2240..2250
2 500 V
2 200 V
Conditions:
T
j
=-40 ÷ 125 °C, half sine waveform,
f = 50 Hz
Mechanical Data
F
m
m
D
S
Mounting
force
Weight
Surface
creepage
distance
Air strike
distance
22 ± 2 kN
0.480 kg
25 mm
D
a
15 mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250,
http://www.abb.com/semiconductors
TS - TP/174/05 Jul-10
1 of 8
5STR 07F2541
Maximum Ratings - Thyristor
V
DRM
Repetitive peak off-state
voltage
T
j
= -40 ÷ 125 °C
Maximum Limits
5STR 07F2541..2550
5STR 07F2240..2250
2 500
2 200
1 194
760
t
p
= 10 ms
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 8.3 ms
Unit
V
I
TRMS
I
TAVm
I
TSM
I
2
t
(di
T
/dt)
cr
RMS on-state current
T
c
= 70 °C, half sine waveform, f = 50 Hz
A
A
A
A
2
s
A/µs
Average on-state current
T
c
= 70 °C, half sine waveform, f = 50 Hz
Peak non-repetitive surge
half sine pulse, V
R
= 0 V
14 000
15 000
980 000
928 000
400
Limiting load integral
half sine pulse, V
R
= 0 V
Critical rate of rise of on-state current
I
T
= 2000 A, V
D
= 0,67V
DRM
,
half sine wave, f = 50 Hz
(dv
D
/dt)
cr
P
AV
I
GTM
V
GTM
V
RGTM
T
jmin
- T
jmax
T
stgmin
-
T
stgmax
Critical rate of rise of off-state voltage
V
D
= 0.67 V
DRM
1 000
5
10
15
2
-40 ÷ 125
-40 ÷ 125
V/µs
W
A
V
V
°C
°C
Maximum average gate power losses
Peak gate current
Peak gate voltage
Reverse peak gate voltage
Operating temperature range
Storage temperature range
Unless otherwise specified T
j
= 125 °C
Maximum Ratings - Diode
V
RRM
Repetitive peak reverse
voltage
T
j
= -40 ÷ 125 °C
Maximum Limits
5STR 07F2541..2550
5STR 07F2240..2250
2 500
2 200
317
202
t
p
= 10 ms
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 8.3 ms
Unit
V
I
FRMS
I
FAVm
I
FSM
I
2
t
RMS forward current
T
c
= 70 °C, half sine waveform, f = 50 Hz
A
A
A
A
2
s
Average forward current
T
c
= 70 °C, half sine waveform, f = 50 Hz
Peak non-repetitive surge
half sine pulse, V
R
= 0 V
4 000
4 270
80 000
75 800
Limiting load integral
half sine pulse, V
R
= 0 V
Unless otherwise specified T
j
= 125 °C
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/174/05 Jul-10
2 of 8
5STR 07F2541
Characteristics – Thyristor
min.
V
TM
V
T0
r
T
I
DM
t
gd
t
gt
t
q
Maximum peak on-state voltage
I
TM
= 2000 A
Value
typ.
max.
2.100
1.391
0.336
100
1
4
group of
t
q
5STR 07F2541
5STR 07F2240
5STR 07F2550
5STR 07F2250
40
Unit
V
V
mΩ
mA
µs
µs
Threshold voltage
Slope resistance
I
T1
= 1000 A, I
T2
= 2000 A
Peak off-state current
V
D
= V
DRM
Delay time
T
j
= 25 °C, V
D
= 100 V, I
TM
= I
TAVm
, t
r
= 0.5 µs, I
GT
= 2 A
Switch-on time
the same conditions as at t
gd
Turn-off time
I
T
= I
TAVm
, di
T
/dt = -50 A/µs,
V
D
= 0.67 V
DRM
, dv
D
/dt = 50 V/µs
µs
50
250
100
1000
400
3.5
1000
500
250
mA
mA
mA
V
I
H
I
L
V
GT
Holding current
Latching current
Gate trigger voltage
V
D
= 12V, I
T
= 4 A
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= - 40 °C
T
j
= +25 °C
T
j
= +125 °C
T
j
= - 40 °C
T
j
= +25 °C
T
j
= +125 °C
I
GT
Gate trigger current
V
D
= 12V, I
T
= 4 A
30
Unless otherwise specified T
j
= 125 °C
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/174/05 Jul-10
3 of 8
5STR 07F2541
Characteristics – Diode
min.
V
FM
V
T0
r
T
Q
rr
I
rrM
t
rr
Maximum forward voltage
I
FM
= 1200 A
Value
typ.
max.
3.000
1.350
2.096
Unit
V
V
mΩ
µC
A
5.6
µs
Threshold voltage
I
F1
= 500 A, I
F2
= 1500 A
Forward slope resistance
Reverse recovery charge
I
FM
= 320 A, di/dt = -50 A/µs, V
D
= 100 V
Maximum reverse recovery current
the same conditions as at Q
rr
Reverse recovery time
the same conditions as at Q
rr
Unless otherwise specified T
j
= 125 °C
Thermal Parameters - Thyristor
R
thjc
Thermal resistance junction to case
double side cooling
anode side cooling
cathode side cooling
Value
30
57
64
6
12
Unit
K/kW
R
thch
Thermal resistance case to heatsink
double side cooling
single side cooling
K/kW
Thermal Parameters - Diode
R
thjc
Thermal resistance junction to case
double side cooling
anode side cooling
cathode side cooling
Value
100
140
370
Unit
K/kW
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/174/05 Jul-10
4 of 8
5STR 07F2541
Transient Thermal Impedance - Thyristor
Correction for periodic
waveforms - Thyristor
180° sine:
add 5.8 K/kW
180° rectangular: add 4.5 K/kW
Transient thermal impedance junction
to case
Z
thjc
( K/kW )
i
τ
i
( s )
R
i
( K/kW )
35
30
25
20
15
10
5
0
0,001
1
0.3289
9.02
2
0.1375
11.50
3
0.0343
6.02
4
0.0037
3.06
5
0.0003
0.39
120° rectangular: add 7.6 K/kW
60° rectangular: add 13.1 K/kW
Analytical function for transient
thermal impedance
Z
thjc
=
∑
R
i
(1
−
exp(
−
t
/
τ
i
))
i
=
1
5
Conditions:
F
m
= 10 ± 2 kN, Double side cooled
0,01
0,1
1
10
Square w ave pulse duration
t
d
( s )
Fig. 2 Dependence transient thermal impedance junction
to case on square pulse - Thyristor
Diode
Correction for periodic
waveforms - Diode
180° sine:
add 13.6 K/kW
180° rectangular: add 10.7 K/kW
Transient thermal impedance junction
to case
Z
thjc
( K/kW )
i
τ
i
( s )
R
i
( K/kW )
120
100
80
60
40
20
0
0,001
1
0.3819
62.39
2
0.1733
23.99
3
0.0171
4.05
4
0.0046
7.85
5
0.0003
1.73
120° rectangular: add 18.1 K/kW
60° rectangular: add 32.4 K/kW
0,01
0,1
1
10
Square w ave pulse duration
t
d
( s )
Fig. 3 Dependence transient thermal impedance junction
to case on square pulse - Diode
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/174/05 Jul-10
5 of 8
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