NEC's 1.5W
GaAs MMIC POWER AMPLIFIER
FEATURES
• E-MODE HJ-FET TECHNOLOGY
• SINGLE +3.2V POWER SUPPLY
• HIGH EFFICIENCY:
PAE = 42% MIN
• HIGH SATURATED POWER:
Pout = +31.5 dBm MIN
• FLEXIBLE FREQUENCY RANGE
• 20-PIN QFN PACKAGE:
(4.15
X
4.15
X
0.9 mm)
UPG2118K
DESCRIPTION
NEC's UPG2118K is a 1.5W, 3 stage power amplifier
developed primarily for DCS/PCS1800 applications.
With modified external matching the UPG2118K can
be tuned from 800 to 2500 MHz.
Use of E-mode FET technology delivers high efficiency
and high linearity with a single positive low voltage
supply.
APPLICATIONS
• 1800 MHz DCS/PCS
• 915 AND 2450 ISM BAND USAGE
• AUTOMATIC METER READERS
• WIRELESS SECURITY
• SATELLITE UPLINK
ORDERING INFORMATION
PART NUMBER
UPG2118K-E3
MARKING
2118
PACKAGE
20-pin QFN
SUPPLYING FORM
• Embossed tape 12mm wide
• 4.5 K pcs/reel
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise specified)
PARAMETERS
Storage Temperature
Operating Temperature
Supply Voltage1,2,3
Active Bias Circuit Voltage
Reference Voltage
Junction Temperature
Input Power
Total Power Dissipation
SYMBOL
T
stg
T
opt
V
D
1,2,3
V
ABC
V
ref
T
j
P
in
P
tot
RATINGS
−45
to +85
−45
to +85
8.0
8.0
5.0
150
15
4.0
UNIT
°C
°C
V
V
V
°C
dBm
W
Caution
This device is ESD sensitive. Please take ESD precautions.
The information contained in this document is being issued in advance of the production cycle for the device.
The parameters for the device may change before final production or NEC Corporation, at its own discretion,
may withdraw the device prior to its production.
California Eastern Laboratories
UPG2118K
PIN CONNECTIONS
PIN NO.
1
2
3
4
5
6
7
8
9
10
CONNECTION
V
G
1,2
V
ref
1,2
V
ABC
V
ref
3
V
G
3
GND
V
D
3/RF OUT
V
D
3/RF OUT
V
D
3/RF OUT
V
D
3/RF OUT
PIN NO.
11
12
13
14
15
16
17
18
19
20
CONNECTION
GND
NC
NC
GND
V
D
2
V
D
1
GND
GND
V
attn
RF IN
(Top View)
RECOMMENDED OPERATING CONDITIONS
(T
A
= 25°C)
PARAMETERS
Supply Voltage
Reference Voltage
Active Bias Circuit Voltage
Input Power
SYMBOL
V
D
1,2,3
V
ref
V
ABC
P
in
MIN
+2.8
+0.04
0
5
TYP
+3.2
-
2.6
-
MAX
+5.5
+1.8
5.5
10
UNIT
V
V
V
dBm
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Active Bias Circuit Current
Reference Current
RF Leakage Current
Output Power
Power Added Efficiency
Power Control Slope
Minimum Output Power
SYMBOL
I
ABC
I
ref
I
leak
P
out
PAE
P
slope
M
Pout
(Unless otherwise specified, TA=+25°C,f=1880MHz,V
D
=+3.2V,V
ABC
=+2.6V,V
ref
=V
attn
=1.8V, P
in
=+5dBm)
TEST CONDITIONS
P
out
=+31.5dBm,V
ABC
=Arbitrary
V
ref
=V
attn
=0.04 to 1.8V
V
ref
=V
attn
=0.04 V
V
ABC
=10K ohm+Load
MIN
-
-
-
+31.5
42.0
V
ref
=V
attn
=0.04 V to 1.8V
ΔV
ref
=0.01V
V
ref
=V
attn
=0.04 V
-
-
TYP
-
-
-
-
-
-
-
MAX
30
10
50
-
-
50:1
-20
UNIT
mA
mA
mA
dBm
%
Vrms/
Vref
dBc
PACKAGE DIMENSIONS (
UNIT: mm)
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
04/11/2005
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
Embedded System
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