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DL-3148-033

Description
Laser Diode
CategoryLED optoelectronic/LED    photoelectric   
File Size51KB,3 Pages
ManufacturerRoithner Lasertechnik GmbH
Websitehttp://www.roithner-laser.com/
Download Datasheet Parametric View All

DL-3148-033 Overview

Laser Diode

DL-3148-033 Parametric

Parameter NameAttribute value
MakerRoithner Lasertechnik GmbH
Reach Compliance Codeunknown
Base Number Matches1
Ordering number : EN5860A
DL-3148-033
Red Laser Diode
DL-3148-033
Index Guided AlGaInP Laser Diode
Overview
The DL-3148-033 is index guided 635 nm (Typ.) AlGaInP laser diode with
low threshold current and high operating temperature. The low threshold
current and short wavelength are achieved by a strained multiple quantum
well active layer. The lasing wavelength is 635nm which is 8 times
brighter than that of 670nm lasers. The DL-3148-033 is suitable for
applications such as bar-code scanners, laser printer, and other optical
information systems.
Package Dimensions
0
ø5.6 – 0.025
ø4.4
ø3.55±0.1
ø1.6
Effective window diameter 1.0min.
Tolerance :
±0.2
Unit
: mm
1
2
3
Top view
0.4±0.1
1.2±0.1
1.0±0.1
Features
•Short wavelength
•Low threshold current
•High operating temperature
•Small package
: 635 nm (Typ.)
: Ith = 40 mA (Typ.)
: 5 mW at 50°C
: 5.6 mmØ
1.27±0.08
0.25
LD facet
3.5±0.5
0.5max.
ø1.4max.
6.5±1.0
3–ø0.45±0.1
Absolute Maximum Ratings at Tc=25
°
C
Parameter
Light Output
Reverse Voltage
Laser
PIN
Symbol
Po
V
R
Topr
Tstg
Ratings
5
2
30
-- to +50
-10
-- to +85
-40
Unit
mW
V
°C
°C
Pin No.
1 2 3 ø2.0
5.6mm ø stem
Electrical Connection
1
3
Operating Temperature
Storage Temperature
LD
PD
2
Electrical and Optical Characteristics at Tc=25
°
C
Parameter
Threshold Current
Operating Current
Operating Voltage
Lasing Wavelength
Beam
g)
Perpendicular
Divergence
Parallel
Off Axis
Perpendicular
Angle
Parallel
Differential Efficiency
Monitoring Output Current
Astigmatism
g)
Full angle at half maximum
Symbol
Ith
Iop
Vop
λ
p
θ⊥
θ
//
∆θ ⊥
∆θ //
dPo/dIop
Im
As
Condition
CW
Po=5mW
Po=5mW
Po=5mW
Po=5mW
Po=5mW
--
-
--
-
--
-
Po=5mW
Po=5mW
Min.
-
-
-
-
-
-
-
-
25
6
-
-
-
-
-
-
0.1
-
-
Typ.
40
55
2.2
635
35
8
-
-
-
-
0.4
0.2
8
– power supply system
Max.
60
75
2.4
640
40
10
±3
±3
-
-
0.5
-
-
Unit
mA
mA
V
nm
deg.
deg.
deg.
deg.
mW/mA
mA
µm
note : The above product specifications are subject to change without notice.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2798 GI / N2897 GI, (IM) No.5860 1/3

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