Fast Page DRAM, 256KX4, 80ns, CMOS, CQCC18, CERAMIC, LCC-18
| Parameter Name | Attribute value |
| Parts packaging code | LCC |
| package instruction | QCCN, SOLCC20/26,.35 |
| Contacts | 18 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| access mode | FAST PAGE |
| Maximum access time | 80 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O type | COMMON |
| JESD-30 code | R-CQCC-N18 |
| JESD-609 code | e0 |
| memory density | 1048576 bit |
| Memory IC Type | FAST PAGE DRAM |
| memory width | 4 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 18 |
| word count | 262144 words |
| character code | 256000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 256KX4 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | QCCN |
| Encapsulate equivalent code | SOLCC20/26,.35 |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| power supply | 5 V |
| Certification status | Qualified |
| refresh cycle | 512 |
| Filter level | MIL-STD-883 |
| Maximum standby current | 0.004 A |
| Maximum slew rate | 0.08 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | TIN LEAD |
| Terminal form | NO LEAD |
| Terminal pitch | 1.27 mm |
| Terminal location | QUAD |
| Base Number Matches | 1 |
京公网安备 11010802033920号
EEWORLD
