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IRFIZ34N-111

Description
Power Field-Effect Transistor, 21A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size267KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

IRFIZ34N-111 Overview

Power Field-Effect Transistor, 21A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

IRFIZ34N-111 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)110 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)21 A
Maximum drain-source on-resistance0.04 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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