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BU406, BU407
NPN Power Transistors
These devices are high voltage, high speed transistors for horizontal
deflection output stages of TV’s and CRT’s.
Features
•
•
•
•
High Voltage: V
CEV
= 330 or 400 V
Fast Switching Speed: t
f
= 750 ns (max)
Low Saturation Voltage: V
CE(sat)
= 1 V (max) @ 5 A
Pb−Free Packages are Available*
http://onsemi.com
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
−
Continuous
−
Peak Repetitive
−
Peak (10 ms)
Base Current
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Junction
Temperature Storage
BU406
BU407
BU406
BU407
BU406
BU407
Symbol
V
CEO
V
CEV
V
CBO
V
EBO
I
C
Value
200
150
400
330
400
330
6
7
10
15
4
60
0.48
−65
to 150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
NPN SILICON
POWER TRANSISTORS
7 AMPERES
−
60 WATTS
150 AND 200 VOLTS
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
I
B
P
D
T
J
, T
stg
Adc
W
W/_C
_C
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
2.08
70
260
Unit
_C/W
_C/W
_C
BU40xG
AY WW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BU40x = Specific Device Code
x = 6 or 7
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
BU406
BU406G
BU407
BU407G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Package
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
©
Semiconductor Components Industries, LLC, 2009
May, 2009
−
Rev. 8
1
Publication Order Number:
BU406/D
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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Î
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Î Î Î Î
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1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
1%.
SWITCHING CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
(Note 1)
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Inductive Load Crossover Time
(V
CC
= 40 Vdc, I
C
= 5 Adc, I
B1
= I
B2
= 0.5 Adc, L = 150
mH)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1 MHz)
Current−Gain
−
Bandwidth Product
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f
test
= 20 MHz)
Forward Diode Voltage
(I
EC
= 5 Adc) “D” only
Base−Emitter Saturation Voltage
(I
C
= 5 Adc, I
B
= 0.5 Adc)
Collector−Emitter Saturation Voltage
(I
C
= 5 Adc, I
B
= 0.5 Adc)
Emitter Cutoff Current
(V
EB
= 6 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CE
= Rated V
CEV
, V
BE
= 0)
(V
CE
= Rated V
CEO
+ 50 Vdc, V
BE
= 0)
(V
CE
= Rated V
CEO
+ 50 Vdc, V
BE
= 0, T
C
= 150_C)
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 100 mAdc, I
B
= 0)
100
10
0.1
hFE, DC CURRENT GAIN
70
T
J
= 100°C
IC, COLLECTOR CURRENT (AMP)
20
30
50
25°C
2
3
0.2 0.3 0.5
0.7 1
I
C
, COLLECTOR CURRENT (AMPS)
V
CE
= 5 V
Figure 1. DC Current Gain
Characteristic
5
http://onsemi.com
BU406, BU407
BU406, BU407
7
10
BU406
BU407
2
0.1
10
1
2
V
CEO(sus)
Symbol
V
CE(sat)
V
BE(sat)
I
EBO
I
CES
V
EC
C
ob
f
T
t
c
3
Figure 2. Maximum Rated Forward
Bias Safe Operating Area
20 30
5 7 10
50 70 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
T
C
= 25°C
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
Min
200
150
10
−
−
−
−
−
−
−
−
−
Typ
80
−
−
−
−
−
−
−
−
−
−
−
dc
0.75
Max
1.2
5
0.1
1
−
−
2
1
1
−
−
BU407
BU406
mAdc
mAdc
Volts
MHz
Unit
Vdc
Vdc
Vdc
pF
ms
200
BU406, BU407
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
BASE
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
−T−
B
4
SEATING
PLANE
F
T
C
S
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 1:
PIN 1.
2.
3.
4.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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3
BU406/D
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