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LT6A01

Description
6 A, 50 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size50KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet View All

LT6A01 Overview

6 A, 50 V, SILICON, RECTIFIER DIODE

LT6A01 - LT6A07
Features
·
·
·
·
·
Diffused Junction
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 400A Peak
Low Reverse Leakage Current
Plastic Material - UL Flammability
Classification 94V-0
INACTIVE, NOT
FOR NEW DESIGN,
USE 6A05 - 6A10
A
6.0A RECTIFIER
B
A
C
D
R-6
Dim
A
B
C
D
Min
25.40
8.60
1.20
8.60
Max
9.10
1.30
9.10
Mechanical Data
·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 2.1 grams (approx)
Marking: Type Number
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
A
= 60°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
qJA
T
j,
T
STG
6A01
50
35
@ T
A
= 25°C unless otherwise specified
6A02
100
70
6A03
200
140
6A04
400
280
6.0
400
1.0
10
1.0
6A05
600
420
6A06
800
560
6A07
1000
700
Unit
V
V
A
A
V
µA
mA
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
@ I
F
= 6.0A
@T
A
= 25°C
@ T
A
= 100°C
140
15
-65 to +150
70
pF
K/W
°C
Notes:
1. Leads maintaianed at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS28008 Rev. G-3
1 of 2
LT6A01 - LT6A07
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