Rev 1: June 2004
AO4430, AO4430L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4430 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity,
body diode characteristics and ultra-low gate
resistance. This device is ideally suited for use as a
low side switch in Notebook CPU core power
conversion. AO4430L (Green Product) is offered in a
lead free package.
Features
V
DS
(V) = 30V
I
D
= 18A
R
DS(ON)
< 5.5mΩ (V
GS
= 10V)
R
DS(ON)
< 7.5mΩ (V
GS
= 4.5V)
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
Maximum
30
±20
18
15
80
3
2.1
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4430, AO4430L
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=18A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=15A
Forward Transconductance
V
DS
=5V, I
D
=18A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
T
J
=125°C
1
80
4.7
6.5
6.2
82
0.7
1
4.5
6060
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
638
355
0.45
103
V
GS
=10V, V
DS
=15V, I
D
=18A
48
18
15
12
V
GS
=10V, V
DS
=15V, R
L
=0.83Ω,
R
GEN
=3Ω
I
F
=18A, dI/dt=100A/µs
8
51.5
8.8
33.5
22
5.5
8
7.5
1.8
Min
30
1
5
100
2.5
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=18A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4430, AO4430L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
10V
50
3.5V
40
I
D
(A)
30
20
10
V
GS
=2.5V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
7.0
Normalized On-Resistance
6.5
V
GS
=4.5V
6.0
R
DS(ON)
(m
Ω
)
5.5
5.0
4.5
4.0
3.5
0
20
40
60
80
100
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=10V
1.6
I
D
=18A
1.4
V
GS
=10V
1.2
V
GS
=4.5V
I
D
(A)
40
125°C
30
20
25°C
10
0
1
1.5
2
2.5
3
3.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
3.0V
4.5V
50
V
DS
=5V
60
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
16
1.0E+02
1.0E+01
12
I
D
=18A
R
DS(ON)
(m
Ω
)
8
125°C
I
S
(A)
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
125°C
25°C
4
25°C
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4430, AO4430L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
20
40
60
80
100
120
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=15V
I
D
=18A
Capacitance (pF)
8000
C
iss
6000
4000
2000
C
rss
C
oss
0
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
R
DS(ON)
limited
10ms
0.1s
1s
10s
DC
T
J(Max)
=150°C
T
A
=25°C
100µs
1ms
10µs
100
80
Power (W)
60
40
20
0
0.001
T
J(Max)
=150°C
T
A
=25°C
I
D
(Amps)
10.0
1.0
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
P
D
T
on
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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