Ordering number : ENN7406
ECH8606
N-Channel Silicon MOSFET
ECH8606
Ultrahigh-Speed Switching Applications
Features
•
•
•
Package Dimensions
unit : mm
2206A
[ECH8606]
0.25
0.3
8
5
0.15
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
2.3
0.65
2.9
Top View
0.25
1
4
2.8
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm
2
!0.8mm)1unit
Mounted on a ceramic board
(900mm
2
!0.8mm)
Conditions
0.9
0.07
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
Ratings
30
±20
6
40
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
Conditions
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
Ratings
min
30
1
±10
1.0
2.4
typ
max
Unit
V
µA
µA
V
Marking : KF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13003 TS IM TA-100299 No.7406-1/4
ECH8606
Continued from preceding page.
Parameter
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=10V, ID=3A
ID=2A, VGS=10V
ID=1A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=6A
VDS=10V, VGS=10V, ID=6A
VDS=10V, VGS=10V, ID=6A
IS=6A, VGS=0
Conditions
Ratings
min
3.3
typ
5
25
52
510
105
70
15
74
43
37
11
1.9
2.9
0.85
1.2
34
75
max
Unit
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
10V
0V
VIN
VDD=15V
ID=3A
RL=5Ω
Electrical Connection
D1
D1
D2
D2
D
PW=10µs
D.C.≤1%
VOUT
G
P.G
50Ω
ECH8606
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
S1
G1
S2
G2
(Top view)
S
6
ID -- VDS
10V
4V
6V
8
V
10
9
8
ID -- VGS
VDS=10V
5
Drain Current, ID -- A
5V
Drain Current, ID -- A
4
7
6
5
4
3
2
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
--25
°
1
2
Ta=
7
C
25
°
C
3.5
4.0
VGS=3V
5
°
C
3
4.5
5.0
Drain-to-Source Voltage, VDS -- V
120
IT05583
80
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
IT05584
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
70
60
100
80
I D=
50
40
30
20
10
0
--50
=4V
, VGS
1A
ID=1A
60
2A
40
10V
, V S=
I D=2A G
20
0
0
2
4
6
8
10
12
IT05585
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta --
°C
IT05586
No.7406-2/4
ECH8606
5
y
fs -- ID
VDS=10V
Forward Transfer Admittance,
y
fs -- S
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
IF -- VSD
VGS=0
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
0.1
25
°
C
2
3
5
7
1.0
2
3
5
7
Drain Current, ID -- A
3
2
2
10
IT05587
0.01
7
5
3
2
0.001
0.2
0.3
0.4
0.5
0.6
0.7
--25
°
C
0.8
Ta=
7
C
-25
°
a= -
T
C
75
°
Forward Current, IF -- A
C
25
°
5
°
C
0.9
1.0
1.1
1.2
SW Time -- ID
2
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
IT05588
VDD=15V
VGS=10V
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
1000
7
100
7
5
3
2
td(off)
tr
5
3
2
Ciss
tf
td(on)
10
7
5
3
2
0.1
2
3
5
7
1.0
2
3
5
7
100
7
5
3
Coss
Crss
2
0
5
10
15
20
25
30
IT05590
Drain Current, ID -- A
10
9
IT05589
100
7
5
3
2
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS=10V
ID=6A
Drain Current, ID -- A
IDP=40A
<10µs
1m
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
IT05591
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ID=6A
s
DC
10
0m
10
ms
s
op
era
tio
n
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board(900mm
2
!0.8mm)
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5
0.01
0.01
Total Gate Charge, Qg -- nC
2.0
PD -- Ta
Mounted on a ceramic board(900mm
2
!0.8mm)
Drain-to-Source Voltage, VDS -- V
IT05592
Allowable Power Dissipation, PD -- W
1.8
1.6
1.5
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
To
ta
lD
1u
n
it
iss
ipa
tio
n
Ambient Temperature, Ta --
°C
IT05582
No.7406-3/4
ECH8606
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2003. Specifications and information herein are subject
to change without notice.
PS No.7406-4/4
京公网安备 11010802033920号
EEWORLD
