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BN1L3M

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size100KB,4 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

BN1L3M Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

BN1L3M Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)70
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)5000 ns
Maximum opening time (tons)500 ns
Base Number Matches1
DATA SHEET
COMPOUND TRANSISTOR
BN1L3M
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
• On-chip bias resistor
(R
1
= 4.7 kΩ, R
2
= 4.7 kΩ)
• Complementary transistor with BA1L3M
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T
T
j
T
stg
Ratings
−60
−50
−10
−100
−200
250
150
−55
to +150
Unit
V
V
V
mA
mA
mW
°C
°C
* PW
10 ms, duty cycle
50 %
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
Collector saturation voltage
Low level input voltage
High level input voltage
Input resistance
Resistance ratio
Turn-on time
Storage time
Turn-off time
Symbol
I
CBO
h
FE1
**
h
FE2
**
V
CE(sat)
**
V
IL
**
V
IH
**
R
1
R
2
/R
2
t
on
t
stg
t
off
V
CC
=
−5
V, R
L
= 1 kΩ
V
I
=
−5
V, PW = 2
µ
s
duty cycle≤2 %
Conditions
V
CB
=
−50
V, I
E
= 0
V
CE
=
−5.0
V, I
C
=
−5.0
mA
V
CE
=
−5.0
V, I
C
=
−50
mA
I
C
=
−5.0
mA, I
B
=
−0.25
mA
V
CE
=
−5.0
V, I
B
=
−100
µ
A
V
CE
=
−0.2
V, I
C
=
−5.0
mA
−30
3.29
0.9
20
70
40
110
−0.02
−1.1
−1.5
4.7
10
6.11
1.1
0.5
3.0
5.0
−0.3
−0.8
MIN.
TYP.
MAX.
−100
80
Unit
nA
V
V
V
kΩ
µ
s
µ
s
µ
s
** PW
350
µ
s, duty cycle
2 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13587EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
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