BSS138E6327 datasheet, PDF - EEWORLD Datasheet

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BSS138E6327: DescriptionSmall Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size90KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSS138E6327 Overview

Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN

BSS138E6327 Parametric

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	0.22 A
Maximum drain-source on-resistance	6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	8 pF
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BSS 138

SIPMOS

Small-Signal Transistor

• N channel

• Enhancement mode

• Logic Level

• V

GS(th)

= 0.8...2.0V

Pin 1

Type

Pin 2

Marking

Pin 3

50 V

0.22 A

DS(on)

3.5

Ω

Package

BSS 138

Type

BSS 138

SOT-23

SSs

Ordering Code

Q67000-S566

Q67000-S216

Tape and Reel Information

E6327

E6433

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

= 20 k

Ω

DGR

Gate source voltage

ESD Sensitivity (HBM) as per MIL-STD 883

Continuous drain current

= 31 ˚C

Class 1

0.22

DC drain current, pulsed

= 25 ˚C

Dpuls

0.88

tot

Power dissipation

= 25 ˚C

0.36

Data Sheet

05.99

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