K7R321882M-FC200 datasheet, PDF

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K7R321882M-FC200: DescriptionQDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165; Categorystorage storage; File Size202KB，19 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K7R321882M-FC200 Overview

QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

K7R321882M-FC200 Parametric

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	LBGA,
Contacts	165
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	0.45 ns
Other features	PIPELINED ARCHITECTURE
JESD-30 code	R-PBGA-B165
length	17 mm
memory density	37748736 bit
Memory IC Type	QDR SRAM
memory width	18
Number of functions	1
Number of terminals	165
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX18
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	1.4 mm
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
width	15 mm
Base Number Matches	1

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K7R323682M

K7R321882M

K7R320982M

Document Title

1Mx36 & 2Mx18 & 4Mx9 QDR

II b2 SRAM

1Mx36-bit, 2Mx18-bit, 4Mx9-bit QDR

II b2 SRAM

Revision History

Rev. No.

0.0

0.1

History

1. Initial document.

Pin name change from DLL to Doff.

Vddq range change from 1.5V to 1.5V~1.8V.

Update JTAG test conditions.

Reserved pin for high density name change from NC to Vss/SA

Delete AC test condition about Clock Input timing Reference Level

Delete clock description on page 2 and add HSTL I/O comment

Draft Date

June, 30 2001

Dec. 5 2001

Remark

Advance

Preliminary

0.2

1. Update current characteristics in DC electrical characteristics

2. Change AC timing characteristics

3. Update JTAG instruction coding and diagrams

Add 4Mx9 Organization.

Add -FC25 part (Part Number, Idd, AC Characteristics)

Add AC electrical characteristics.

Change AC timing characteristics.

Change DC electrical characteristics(I

SB1

)

Change the data Setup/Hold time.

Change the Access Time.(tCHQV, tCHQX, etc.)

Change the Clock Cycle Time.(MAX value of tKHKH)

Change the JTAG instruction coding.

July, 29. 2002

Preliminary

0.3

Sep. 6. 2002

Preliminary

0.4

Oct. 7. 2002

Preliminary

0.5

1. Change the Boundary scan exit order.

2. Change the AC timing characteristics(-25, -20)

3. Correct the Overshoot and Undershoot timing diagrams.

1. Change the JTAG Block diagram

1. Correct the JTAG ID register definition

2. Correct the AC timing parameter (delete the tKHKH Max value)

3. Change the Isb1 current.

1. Change the Maximum Clock cycle time.

2. Correct the 165FBGA package ball size.

1. Final spec release

1. Delete the x8 Org. Part

Dec. 16, 2002

Preliminary

0.6

0.7

Dec. 26, 2002

Mar. 20, 2003

Preliminary

0.8

April. 4, 2003

Preliminary

1.0

2.0

Oct. 31, 2003

Dec. 1, 2003

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

-1-

Dec. 2003

Rev 2.0

K7R321882M-FC200 Related Products

	K7R321882M-FC200	K7R320982M-FC160	K7R323682M-FC200	K7R323682M-FC160	K7R320982M-FC200	K7R321882M-FC160
Description	QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165	QDR SRAM, 4MX9, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165	QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165	QDR SRAM, 1MX36, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165	QDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165	QDR SRAM, 2MX18, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	LBGA,	LBGA,	LBGA,	LBGA,	LBGA,	LBGA,
Contacts	165	165	165	165	165	165
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	0.45 ns	0.5 ns	0.45 ns	0.5 ns	0.45 ns	0.5 ns
Other features	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
JESD-30 code	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165
length	17 mm	17 mm	17 mm	17 mm	17 mm	17 mm
memory density	37748736 bit	37748736 bit	37748736 bit	37748736 bit	37748736 bit	37748736 bit
Memory IC Type	QDR SRAM	QDR SRAM	QDR SRAM	QDR SRAM	QDR SRAM	QDR SRAM
memory width	18	9	36	36	9	18
Number of functions	1	1	1	1	1	1
Number of terminals	165	165	165	165	165	165
word count	2097152 words	4194304 words	1048576 words	1048576 words	4194304 words	2097152 words
character code	2000000	4000000	1000000	1000000	4000000	2000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	2MX18	4MX9	1MX36	1MX36	4MX9	2MX18
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LBGA	LBGA	LBGA	LBGA	LBGA	LBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm
Maximum supply voltage (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
width	15 mm	15 mm	15 mm	15 mm	15 mm	15 mm
Base Number Matches	1	1	1	1	-	-

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