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IS62LV25616ALL-85T

Description
Standard SRAM, 256KX16, 85ns, CMOS, PDSO44, TSOP2-44
Categorystorage    storage   
File Size57KB,10 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
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IS62LV25616ALL-85T Overview

Standard SRAM, 256KX16, 85ns, CMOS, PDSO44, TSOP2-44

IS62LV25616ALL-85T Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeTSOP2
package instructionTSOP2-44
Contacts44
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time85 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G44
JESD-609 codee0
length18.41 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width16
Number of functions1
Number of terminals44
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply3/3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.00001 A
Minimum standby current1.5 V
Maximum slew rate0.04 mA
Maximum supply voltage (Vsup)3.45 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width10.16 mm
Base Number Matches1
IS62LV25616ALL
256K x 16 LOW VOLTAGE, ULTRA
LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 70 and 85 ns
• CMOS low power operation
– 135 mW (typical) operating
– 16.5 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 2.7V (min) to 3.45V (max) V
CC
power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP (Type II) and
48-pin mini BGA (8mm x 10mm and 7.2mm x 8.7mm)
ISSI
DESCRIPTION
®
PRELIMINARY INFORMATION
MARCH 2002
The
ISSI
IS62LV25616ALL is high-speed, 4,194,304 bit
static RAM organized as 262,144 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-performance
and low power consumption devices.
When
CE
is HIGH (deselected) or when
CE
is low and both
LB
and
UB
are HIGH, the device assumes a standby mode at which the
power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs,
CE
and
OE.
The active LOW Write Enable
(WE) controls both writing and reading of the memory. A data byte
allows Upper Byte (UB) and Lower Byte (LB) access.
The IS62LV25616ALL is packaged in the JEDEC standard
44-pin TSOP (Type II) and 48-pin mini BGA (8mm x 10mm
and 7.2mm x 8.7mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K x 16
MEMORY ARRAY
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible
product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
03/21/02
1

IS62LV25616ALL-85T Related Products

IS62LV25616ALL-85T IS62LV25616ALL-85MI IS62LV25616ALL-85TI IS62LV25616ALL-85M IS62LV25616ALL-85BI IS62LV25616ALL-70BI IS62LV25616ALL-70MI IS62LV25616ALL-70B IS62LV25616ALL-70M IS62LV25616ALL-70T
Description Standard SRAM, 256KX16, 85ns, CMOS, PDSO44, TSOP2-44 Standard SRAM, 256KX16, 85ns, CMOS, PBGA48, 7.20 X 8.70 MM, MINI, BGA-48 Standard SRAM, 256KX16, 85ns, CMOS, PDSO44, TSOP2-44 Standard SRAM, 256KX16, 85ns, CMOS, PBGA48, 7.20 X 8.70 MM, MINI, BGA-48 Standard SRAM, 256KX16, 85ns, CMOS, PBGA48, 8 X 10 MM, MINI, BGA-48 Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 8 X 10 MM, MINI, BGA-48 Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 7.20 X 8.70 MM, MINI, BGA-48 Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 8 X 10 MM, MINI, BGA-48 Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 7.20 X 8.70 MM, MINI, BGA-48 Standard SRAM, 256KX16, 70ns, CMOS, PDSO44, TSOP2-44
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code TSOP2 BGA TSOP2 BGA BGA BGA BGA BGA BGA TSOP2
package instruction TSOP2-44 7.20 X 8.70 MM, MINI, BGA-48 TSOP2-44 7.20 X 8.70 MM, MINI, BGA-48 8 X 10 MM, MINI, BGA-48 8 X 10 MM, MINI, BGA-48 7.20 X 8.70 MM, MINI, BGA-48 8 X 10 MM, MINI, BGA-48 7.20 X 8.70 MM, MINI, BGA-48 TSOP2-44
Contacts 44 48 44 48 48 48 48 48 48 44
Reach Compliance Code compliant compli compliant compliant compliant compliant compliant compliant compli compli
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 85 ns 85 ns 85 ns 85 ns 85 ns 70 ns 70 ns 70 ns 70 ns 70 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PDSO-G44 R-PBGA-B48 R-PDSO-G44 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PDSO-G44
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
length 18.41 mm 8.7 mm 18.41 mm 8.7 mm 10 mm 10 mm 8.7 mm 10 mm 8.7 mm 18.41 mm
memory density 4194304 bit 4194304 bi 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bi 4194304 bi
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 16 16 16 16 16 16 16 16 16 16
Number of functions 1 1 1 1 1 1 1 1 1 1
Number of terminals 44 48 44 48 48 48 48 48 48 44
word count 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words
character code 256000 256000 256000 256000 256000 256000 256000 256000 256000 256000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 85 °C 85 °C 70 °C 85 °C 85 °C 85 °C 70 °C 70 °C 70 °C
organize 256KX16 256KX16 256KX16 256KX16 256KX16 256KX16 256KX16 256KX16 256KX16 256KX16
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 LFBGA TSOP2 LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA TSOP2
Encapsulate equivalent code TSOP44,.46,32 BGA48,6X8,32 TSOP44,.46,32 BGA48,6X8,32 BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,32 BGA48,6X8,30 BGA48,6X8,32 TSOP44,.46,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE GRID ARRAY, LOW PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 240 NOT SPECIFIED 240 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 240
power supply 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.3 mm 1.2 mm 1.3 mm 1.35 mm 1.35 mm 1.3 mm 1.35 mm 1.3 mm 1.2 mm
Maximum standby current 0.00001 A 0.00001 A 0.00001 A 0.00001 A 0.00001 A 0.00001 A 0.00001 A 0.00001 A 0.00001 A 0.00001 A
Minimum standby current 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
Maximum slew rate 0.04 mA 0.045 mA 0.045 mA 0.04 mA 0.045 mA 0.05 mA 0.05 mA 0.045 mA 0.045 mA 0.045 mA
Maximum supply voltage (Vsup) 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V
Minimum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Nominal supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
surface mount YES YES YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING BALL GULL WING BALL BALL BALL BALL BALL BALL GULL WING
Terminal pitch 0.8 mm 0.75 mm 0.8 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.8 mm
Terminal location DUAL BOTTOM DUAL BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM DUAL
Maximum time at peak reflow temperature 30 NOT SPECIFIED 30 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 30
width 10.16 mm 7.2 mm 10.16 mm 7.2 mm 8 mm 8 mm 7.2 mm 8 mm 7.2 mm 10.16 mm
Maker Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) - Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
Base Number Matches 1 1 1 1 1 1 - - - -
Humidity sensitivity level - 3 - 3 3 3 3 3 3 -

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