DCR1673SA
DCR1673SA
Phase Control Thyristor
FDS5646-2.0 February 2004
FEATURES
I
Double Side Cooling
I
High Surge Capability
I
High Mean Current
I
Fatigue Free
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dVdt*
dI/dt
2800V
5088A
83000A
1000V/
µ
s
250A/
µ
s
APPLICATIONS
I
High Power Drives
I
High Voltage Power Supplies
I
DC Motor Control
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
2800
2700
2600
2500
2400
Conditions
DCR1673SA28
DCR1673SA27
DCR1673SA26
DCR1673SA25
DCR1673SA24
T
vj
= 0˚ to 125˚C,
I
DRM
= I
RRM
= 500mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
Respectively
Outline type code: A.
See Package Details for further information.
Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1673SA27
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DCR1673SA
CURRENT RATINGS
T
case
= 60˚C unless stated otherwise
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
5088
7995
7280
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
3300
5180
4350
A
A
A
CURRENT RATINGS
T
case
= 80˚C unless stated otherwise
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
3990
6320
5570
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
2540
3980
3250
A
A
A
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DCR1673SA
SURGE RATINGS
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
66.4
22.0 x 10
6
83.0
34.4 x 10
6
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 83.0kN
with mounting compound
On-state (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
–55
74.0
125
125
91.0
o
Min.
dc
Anode dc
-
-
-
-
-
-
Max.
0.0065
0.013
0.013
0.001
0.002
135
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
Double side
Single side
o
R
th(c-h)
Thermal resistance - case to heatsink
o
C
C
C
o
kN
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DCR1673SA
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
Parameter
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Conditions
At V
RRM
/V
DRM
, T
case
= 125
o
C
To 67% V
DRM
T
j
= 125
o
C
From 67% V
DRM
to 1100A
Gate source 1A
t
r
= 0.5µs, T
j
= 125
o
C
At T
vj
= 125
o
C
At T
vj
= 125
o
C
V
D
= 67% V
DRM
, Gate source 20V, 10Ω
t
r
= 0.5µs, T
j
= 25
o
C
T
j
= 25
o
C, V
D
= 5V
T
j
= 25
o
C, R
g-k
=
∞
Repetitive 50Hz
Non-repetitive
Typ.
-
-
-
-
-
-
1.0
150
40
Max.
500
1000
250
500
0.82
0.076
1.5
750
200
Units
mA
V/µs
A/µs
A/µs
V
mΩ
µs
mA
mA
dI/dt
Rate of rise of on-state current
V
T(TO)
r
T
t
gd
I
L
I
H
Threshold voltage
On-state slope resistance
Delay time
Latching current
Holding current
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Anode positive with respect to cathode
See table, gate characteristics curve
Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
Max.
3.5
500
0.25
30
0.25
5
30
150
10
Units
V
mA
V
V
V
V
A
W
W
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DCR1673SA
CURVES
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
0.6
10000
Measured under pulse conditions
T
j
= 125˚C
9000
8000
Instantaneous on-state current, I
T
- (A)
Mean power dissipation - (W)
7000
6000
5000
4000
3000
2000
1000
0
0
dc
1/2 wave
3 phase
6 phase
12 phase
1000
2000
3000
4000
5000
Mean on-state current, I
T
- (A)
6000
7000
0.7
0.8 0.9
1
1.1 1.2 1.3 1.4
Instantaneous on-state voltage, V
T
- (V)
1.5
1.6
Fig.2 Maximum (limit) on-state characteristics
V
TM
Equation:-
V
TM
= A + Bln (I
T
) + C.I
T
+D.√I
T
A = 0.6180535
B = 0.007965
C = 4.57 x 10
–5
D = 4.003 x 10
–3
these values are valid for T
j
= 125˚C for I
T
200A to 10000A
Where
Fig.3 Dissipation curves
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