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DMN100-13

Description
Small Signal Field-Effect Transistor, 1.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SC-59, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size64KB,3 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

DMN100-13 Overview

Small Signal Field-Effect Transistor, 1.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SC-59, 3 PIN

DMN100-13 Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeSC-59
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)1.1 A
Maximum drain-source on-resistance0.24 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DMN100
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
·
·
Extremely Low On-Resistance:
170mW @ V
GS
= 4.5V
High Drain Current: 1.1A
Ideal for Notebook Computer, Portable Phone,
PCMCIA Cards, and Battery Powered Circuits
SC-59
A
D
TOP VIEW
B
S
D
G
H
K
J
L
M
C
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.30
1.40
2.50
0.85
0.30
1.70
2.70
¾
1.00
0.55
0.10
Max
0.50
1.80
3.00
1.05
0.70
2.10
3.10
0.10
1.40
0.70
0.35
Mechanical Data
·
·
·
·
·
·
Case: SC-59, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagrams
Weight: 0.008 grams (approx.)
Ordering Information, See Sheet 2
G
E
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
@ T
A
= 25°C unless otherwise specified
Symbol
V
DSS
Continuous
Continuous
Pulsed
V
GSS
I
D
P
d
R
qJA
T
j
, T
STG
DMN100
30
±20
±
1.1
±
4.0
500
250
-55 to +150
Units
V
V
A
mW
K/W
°C
Characteristic
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1. Pulse width
£
300ms, duty cycle
£
2%.
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