BZV55-B22 datasheet, PDF - EEWORLD Datasheet

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BZV55-B22: DescriptionZener Diode, 22V V(Z), 2%, 0.4W, Silicon, Unidirectional, GLASS, MINI MELF-2; CategoryDiscrete semiconductor diode; File Size715KB，6 Pages; ManufacturerFagor Electrónica

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BZV55-B22 Overview

Zener Diode, 22V V(Z), 2%, 0.4W, Silicon, Unidirectional, GLASS, MINI MELF-2

BZV55-B22 Parametric

Parameter Name	Attribute value
Parts packaging code	MELF
package instruction	GLASS, MINI MELF-2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
JESD-30 code	O-LELF-R2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.4 W
Certification status	Not Qualified
Nominal reference voltage	22 V
surface mount	YES
technology	ZENER
Terminal form	WRAP AROUND
Terminal location	END
Maximum voltage tolerance	2%
Working test current	5 mA
Base Number Matches	1

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BZV55

500 mW Surface Mounted Zener Diode

Dimensions in mm.

GLASS CASE:

Mini Melf / SOD-80

Voltage

2.4 V to 75 V

Power Dissipation

500 mW

Mounting Pad Layout

Features

• Silicon Planar Power Zener Diodes.

• For use as low voltage stabilizer or voltage reference.

• The Zener voltages are graded according to the

international E 24 standard. Higher Zener voltages

and 1% tolerance available on request.

• Diodes available in these tolerance series:

±2% BZV55-B, ±3% BZV55-F, ±5% BZV55-C.

Mechanical Data

Case: MiniMELF Glass Case (SOD-80)

Weight: approx. 0.05g

Cathode Band Color: Blue

Maximum Ratings and Thermal Characteristics at 25 ºC

(Unless otherwise specified)

Symbol

Parameter

Zener current (see Table "Characteristics")

Power Dissipation at T

flange

=50°C

Power Dissipation at T

=50°C

Junction temperature

Storage temperature range

Continuous forward current

Thermal resistance junction to ambient air

Thermal resistance junction to lead

Peak reverse power dissipation (non-repetitive) t

=100µs

1. Mounted on ceramic substrate 10mm x 10mm x 0.6mm

2. T

= 150°C

Value

500

400

(1)

-65 to +175

250

0.38

(1)

0.30

(2)

Unit

°C

°C/mW

tot

th (j-a)

th (j-l)

ZSM

NOTES:

Mar - 08

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