Rev 2: Sep 2004
AOD422, AOD422L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD422 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. AOD422L (Green
Product) is offered in a Lead Free package.
Features
V
DS
(V) = 20V
I
D
= 10 A
R
DS(ON)
< 22mΩ (V
GS
= 4.5V)
R
DS(ON)
< 26mΩ (V
GS
= 2.5V)
R
DS(ON)
< 34mΩ (V
GS
= 1.8V)
ESD Rating: 2000V HBM
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
C
Avalanche Current
C
C
Maximum
20
±8
10
10
30
15
26
50
20
2.5
1.6
-55 to 150
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.1mH
Power Dissipation
B
Power Dissipation
A
T
C
=100°C
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
16.7
40
1.9
Max
25
50
2.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOD422, AOD422L
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=16V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±4.5V
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=10A
T
J
=125°C
0.4
30
18
25
21
26
30
0.76
22
31
26
34
1
10
0.6
Min
20
1
5
±1
±10
1
Typ
Max
Units
V
µA
µA
µA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
g
FS
V
SD
I
S
V
GS
=2.5V, I
D
=8A
V
GS
=1.8V, I
D
=5A
Forward Transconductance
V
DS
=5V, I
D
=10A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
G
Maximum Body-Diode Continuous Current
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
Turn-On Rise Time
t
D(off)
t
f
t
rr
Q
rr
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
1160
187
146
1.5
16
0.8
3.8
6.2
12.7
51.7
16
17.6
6.5
V
GS
=4.5V, V
DS
=10V, I
D
=10A
V
GS
=5V, V
DS
=10V, R
L
=1Ω,
R
GEN
=3Ω
I
F
=10A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=10A, dI/dt=100A/µs
2
A: The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any a given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
B. The power dissipation P is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
D
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOD422, AOD422L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
8V
V
GS
=2V
20
I
D
(A)
V
GS
=1.5V
I
D
(A)
10
125°C
25°C
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
V
GS
(Volts)
Figure 2: Transfer Characteristics
20
V
GS
=5V
15
10
V
GS
=1V
0
5
40
V
GS
=1.8V
R
DS(ON)
(m
Ω
)
30
V
GS
=2.5V
20
V
GS
=4.5V
10
0
5
10
15
20
I
D(
A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Normalize ON-Resistance
1.6
V
GS
=2.5V
I
D
=8A
V
GS
=1.8V
I
D
=5A
V
GS
=4.5V
I
D
=10A
1.4
1.2
1.0
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
I
D
=10A
50
R
DS(ON)
(m
Ω
)
40
30
20
10
0
2
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
125°C
1E+01
1E+00
1E-01
I
S
(A)
1E-02
1E-03
25°C
1E-04
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
AOD422, AOD422L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000
V
DS
=10V
I
D
=10A
Capacitance (pF
)
1600
C
iss
1200
800
400
0
0
5
10
15
20
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
rss
C
oss
5
4
V
GS
(Volt
s)
3
2
1
0
100.0
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
10µs
100µs
60
50
T
J(Max)
=150°C
T
A
=25°C
I
D
(Amps)
10.0
40
Power (W)
1ms
0.1s
1.0
1s
10s
DC
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
10ms
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
Single Pulse
T
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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