IS61WV12816DBLL-10BLI-TR datasheet, PDF

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IS61WV12816DBLL-10BLI-TR: DescriptionApplication Specific SRAM, 128KX16, 10ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MINI, BGA-48; Categorystorage storage; File Size206KB，21 Pages; ManufacturerIntegrated Silicon Solution ( ISSI ); Environmental Compliance

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IS61WV12816DBLL-10BLI-TR Overview

Application Specific SRAM, 128KX16, 10ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MINI, BGA-48

IS61WV12816DBLL-10BLI-TR Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Integrated Silicon Solution ( ISSI )
package instruction	TFBGA, BGA48,6X8,30
Reach Compliance Code	compliant
Factory Lead Time	8 weeks
Maximum access time	10 ns
I/O type	COMMON
JESD-30 code	R-PBGA-B48
JESD-609 code	e3
length	8 mm
memory density	2097152 bit
Memory IC Type	APPLICATION SPECIFIC SRAM
memory width	16
Humidity sensitivity level	1
Number of functions	1
Number of terminals	48
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA48,6X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	2.5/3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.00007 A
Minimum standby current	2 V
Maximum slew rate	0.065 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.4 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	MATTE TIN
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	6 mm
Base Number Matches	1

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IS61WV12816DALL/DALS

IS61WV12816DBLL/DBLS

IS64WV12816DBLL/DBLS

128K x 16 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM

FEATURES

HIGH SPEED: (IS61/64WV12816DALL/DBLL)

• High-speed access time: 8, 10, 12, 20 ns

• Low Active Power: 135 mW (typical)

• Low Standby Power: 12

μW

(typical)

CMOS standby

LOW POWER: (IS61/64WV12816DALS/DBLS)

• High-speed access time: 25, 35 ns

• Low Active Power: 55 mW (typical)

• Low Standby Power: 12

μW

(typical)

CMOS standby

• Single power supply

— V

1.65V to 2.2V (IS61WV12816DAxx)

— V

2.4V to 3.6V (IS61/64WV12816DBxx)

• Fully static operation: no clock or refresh

required

• Three state outputs

• Data control for upper and lower bytes

• Industrial and Automotive temperature support

• Lead-free available

JULY 2011

DESCRIPTION

The

ISSI

IS61WV12816DAxx/DBxx and IS64WV12816DBxx

are high-speed, 2,097,152-bit static RAMs organized as

131,072 words by 16 bits. It is fabricated using

ISSI

's high-

performance CMOS technology. This highly reliable pro-

cess coupled with innovative circuit design techniques,

yields high-performance and low power consumption de-

vices.

When

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs,

and

OE.

The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

The IS61WV12816DAxx/DBxx and IS64WV12816DBxx are

packaged in the JEDEC standard 44-pin TSOP Type II and

48-pin Mini BGA (6mm x 8mm).

FUNCTIONAL BLOCK DIAGRAM

A0-A16

DECODER

128K x 16

MEMORY ARRAY

VDD

GND

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

I/O

DATA

CIRCUIT

COLUMN I/O

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. D

06/21/2011

IS61WV12816DBLL-10BLI-TR Related Products

	IS61WV12816DBLL-10BLI-TR	IS61WV12816DBLL-10TLI	IS61WV12816DBLL-10BLI	IS61WV12816DBLL-10TLI-TR
Description	Application Specific SRAM, 128KX16, 10ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MINI, BGA-48	Standard SRAM, 128KX16, 10ns, CMOS, PDSO44, LEAD FREE, PLASTIC, TSOP2-44	Standard SRAM, 128KX16, 10ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MINI, BGA-48	Application Specific SRAM, 128KX16, 10ns, CMOS, PDSO44, LEAD FREE, PLASTIC, TSOP2-44
Is it lead-free?	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
package instruction	TFBGA, BGA48,6X8,30	LEAD FREE, PLASTIC, TSOP2-44	TFBGA, BGA48,6X8,30	TSOP2, TSOP44,.46,32
Reach Compliance Code	compliant	compli	compliant	compliant
Factory Lead Time	8 weeks	8 weeks	8 weeks	8 weeks
Maximum access time	10 ns	10 ns	10 ns	10 ns
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PBGA-B48	R-PDSO-G44	R-PBGA-B48	R-PDSO-G44
JESD-609 code	e3	e3	e1	e3
length	8 mm	18.415 mm	8 mm	18.415 mm
memory density	2097152 bit	2097152 bi	2097152 bit	2097152 bit
Memory IC Type	APPLICATION SPECIFIC SRAM	STANDARD SRAM	STANDARD SRAM	APPLICATION SPECIFIC SRAM
memory width	16	16	16	16
Humidity sensitivity level	1	3	3	1
Number of functions	1	1	1	1
Number of terminals	48	44	48	44
word count	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
organize	128KX16	128KX16	128KX16	128KX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TSOP2	TFBGA	TSOP2
Encapsulate equivalent code	BGA48,6X8,30	TSOP44,.46,32	BGA48,6X8,30	TSOP44,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	225	260	260	225
power supply	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum standby current	0.00007 A	0.00007 A	0.00007 A	0.00007 A
Minimum standby current	2 V	2 V	2 V	2 V
Maximum slew rate	0.065 mA	0.065 mA	0.065 mA	0.065 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2.4 V	2.4 V	2.4 V	2.4 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	MATTE TIN	Matte Tin (Sn) - annealed	Tin/Silver/Copper (Sn/Ag/Cu)	MATTE TIN
Terminal form	BALL	GULL WING	BALL	GULL WING
Terminal pitch	0.75 mm	0.8 mm	0.75 mm	0.8 mm
Terminal location	BOTTOM	DUAL	BOTTOM	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	10	10	NOT SPECIFIED
width	6 mm	10.16 mm	6 mm	10.16 mm
Base Number Matches	1	1	1	1
ECCN code	-	3A991	3A991.B.2.A	3A991

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