BC337 / BC338
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURE
Power Dissipation
G
H
CLASSIFICATION OF h
FE
Product-Rank
Product-Rank
Range
BC337-16
BC338-16
100~250
BC337-25
BC338-25
160~400
BC337-40
BC338-40
K
J
A
B
D
1
Collector
2
Base
3
Emitter
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
250~630
E
C
F
Collector
1
2
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Total Device Dissipation
Junction, Storage Temperature
BC337
BC338
BC337
BC338
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
, T
STG
Ratings
50
30
45
25
5
800
625
150, -55~150
Unit
V
V
V
mA
mW
°
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 1 of 4
BC337 / BC338
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown
BC337
Voltage
BC338
Collector to Emitter Breakdown BC337
Voltage
BC338
Emitter to Base Breakdown Voltage
BC337
Collector Cut-Off Current
BC338
BC337
Collector Cut-Off Current
BC338
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
Min.
50
30
45
25
5
-
-
-
-
-
100
60
-
-
-
210
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
Max.
-
-
-
-
-
0.1
0.1
0.2
0.2
0.1
630
-
0.7
1.2
1.2
-
-
Unit
V
V
V
Test Conditions
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=45V, I
E
=0
µA
V
CB
=25V, I
E
=0
V
CE
=40V, I
B
=0
µA
V
CE
=20V, I
B
=0
µA
V
EB
=4V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=300mA
V I
C
=500mA, I
B
=50mA
V I
C
=500mA, I
B
=50mA
V V
CE
=1V, I
C
=300mA
MHz V
CE
=5V, I
C
=10mA, f=100MHz
pF V
CB
=10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 2 of 4
BC337 / BC338
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 3 of 4
BC337 / BC338
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 4 of 4
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