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2SC5618-EB-A

Description
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size98KB,22 Pages
ManufacturerNEC Electronics
Environmental Compliance
Download Datasheet Parametric View All

2SC5618-EB-A Overview

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-3

2SC5618-EB-A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.03 A
Collector-based maximum capacity0.8 pF
Collector-emitter maximum voltage3 V
ConfigurationSINGLE
highest frequency bandL BAND
JESD-30 codeR-PDSO-F3
JESD-609 codee6
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)14000 MHz
Base Number Matches1
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5618
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
FEATURES
• NF = 1.5 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
• NF = 1.4 dB TYP. @ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
• 3-pin lead-less minimold package
ORDERING INFORMATION
Part Number
2SC5618
2SC5618-T3
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
5.0
3.0
2.0
30
90
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10083EJ02V0DS (2nd edition)
Date Published March 2002 CP(K)
Printed in Japan
The mark
shows major revised points.
©
NEC Corporation 2001
©
NEC Compound Semiconductor Devices 2002
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