GF4410
N-Channel Enhancement-Mode MOSFET
CH
EN ET
T
R N
F
E
V
DS
30V
R
DS(ON)
13.5
m
Ω
I
D
10A
TM
G
5
SO-8
0.197 (5.00)
0.189 (4.80)
8
0.157 (3.99)
0.150 (3.81)
0.244 (6.20)
0.228 (5.79)
1
4
0.05 (1.27)
0.04 (1.02)
Dimensions in inches
and (millimeters)
0.019 (0.48)
x 45
°
0.010 (0.25)
0.245 (6.22)
Min.
0.165 (4.19)
0.155 (3.94)
0.050 (1.27)
0.020 (0.51)
0.013 (0.33)
0.069 (1.75)
0.053 (1.35)
0.009 (0.23)
0.004 (0.10)
0.009 (0.23)
0.007 (0.18)
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
Mounting Pad Layout
0
°
– 8
°
0.050(1.27)
0.016 (0.41)
Mechanical Data
Case:
SO-8 molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position:
Any
Weight:
0.5g
Packaging Codes – Options:
5B – 2.5K per 13” reel, 15K per carton
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low
On-Resistance
• Specially Designed for Low Voltage DC/DC
Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics
(T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
J
= 150°C
(1)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
(1)
Maximum Power Dissipation
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
R
θJA
A
= 25°C unless otherwise noted)
Limit
30
Unit
V
±
20
10
8
50
2.3
2.5
1.6
–55 to 150
50
A
W
°C
°C/W
2/15/01
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient Thermal Resistance
(1)
Notes:
(1) Surface Mounted on FR4 Board, t
≤
10 sec.
GF4410
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics
(T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
(1)
Drain-Source On-State Resistance
(1)
Forward Transconductance
(1)
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Diode Forward Voltage
(1)
Source-Drain Reverse Recovery Time
Note:
(1) Pulse test; pulse width
≤
300
µs,
duty cycle
≤
2%
J
= 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 0V, V
GS
=
±
20V
V
DS
= 30V, V
GS
= 0V
V
DS
=30V, V
GS
=0V, T
J
=55°C
V
DS
≥
5V, V
GS
= 10V
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 5A
V
DS
= 15V, I
D
= 10A
1.0
–
–
–
20
–
–
–
–
–
–
–
–
8
12
38
–
V
nA
µA
A
mΩ
S
±
100
1
25
–
13.5
20
–
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
= 15V, I
D
= 10A, V
GS
= 5V
V
DS
= 15V, V
GS
= 10V
I
D
= 10A
V
DD
= 25V, R
L
= 25Ω
I
D
≈
1A, V
GEN
= 10V
R
G
= 6Ω
V
GS
= 0V
V
DS
= 25V
f = 1.0MH
Z
–
–
–
–
–
–
–
–
–
–
–
23
42
5
8
9
12
70
35
2100
320
190
32
60
–
–
15
20
100
80
–
–
–
pF
ns
nC
V
SD
t
rr
I
S
= 2.3A, V
GS
= 0V
I
F
= 2.3A, di/dt = 100A/µs
–
–
0.75
55
1.1
80
V
ns
V
DD
t
on
t
off
t
r
90%
Switching
Test Circuit
V
GEN
R
G
V
IN
D
R
D
V
OUT
Switching
Waveforms
t
d(on)
t
d(off)
t
f
90 %
10%
INVERTED
90%
Output, V
OUT
DUT
10%
G
50%
50%
S
Input, V
IN
10%
PULSE WIDTH
GF4410
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
50
V
GS
=10V
6.0
V
40 5.0
V
A
= 25°C unless otherwise noted)
Fig. 1 – Output Characteristics
50
4.5V
4.0V
3.5V
40
Fig. 2 – Transfer Characteristics
V
DS
= 10V
I
D
-- Drain Source Current (A)
I
D
-- Drain Current (A)
30
30
T
J
= 125°C
--55°C
10
20
3.0V
20
10
2.5V
0
0
0.5
1
1.5
2
2.5
3
25°C
0
1
2
3
4
5
V
DS
-- Drain-to-Source Voltage (V)
V
GS
-- Gate-to-Source Voltage (V)
Fig. 3 – Threshold Voltage
vs. Temperature
1.8
I
D
= 250µA
0.02
Fig. 4 – On-Resistance
vs. Drain Current
V
GS(th)
-- Threshold Voltage (V)
R
DS(ON)
-- On-Resistance (Ω)
1.6
0.016
1.4
1.2
0.012
V
GS
= 4.5V
0.008
V
GS
= 10V
0.004
1
0.8
0.6
--50
0
--25
0
25
50
75
100
125
150
0
10
20
30
40
50
T
J
-- Junction Temperature (°C)
I
D
-- Drain Current (A)
Fig. 5 – On-Resistance
vs. Junction Temperature
1.6
V
GS
= 10V
I
D
= 10A
R
DS(ON)
-- On-Resistance
(Normalized)
1.4
1.2
1
0.8
0.6
--50
--25
0
25
50
75
100
125
150
T
J
-- Junction Temperature (°C)
GF4410
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 6 – On-Resistance
vs. Gate-to-Source Voltage
0.035
I
D
= 10A
10
Fig. 7 – Gate Charge
V
GS
-- Gate-to-Source Voltage (V)
V
DS
= 15V
I
D
= 10A
8
0.03
R
DS(ON)
-- On-Resistance (Ω)
0.025
0.02
0.015
0.01
25°C
0.005
0
2
4
6
8
10
T
J
= 125°C
6
4
2
0
0
10
20
30
40
30
45
V
GS
-- Gate-to-Source Voltage (V)
Q
g
-- Gate Charge (nC)
Fig. 8 – Capacitance
3000
f = 1MHz
V
GS
= 0V
100
Fig. 9 – Source-Drain Diode
Forward Voltage
V
GS
= 0V
2500
2000
1500
I
S
-- Source Current (A)
C -- Capacitance (pF)
C
iss
10
1
T
J
= 125°C
25°C
1000
500
0
0
5
C
rss
10
15
20
25
C
oss
0.1
--55°C
0.01
0
0.2
0.4
0.6
0.8
1
1.2
V
DS
-- Drain-to-Source Voltage (V)
V
SD
-- Source-to-Drain Voltage (V)
GF4410
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage
vs. Junction Temperature
43
I
D
= 250µA
Fig. 11 – Transient Thermal
Impedance
BV
DSS
-- Breakdown Voltafge (V)
42
41
40
39
38
37
--50
--25
0
25
50
75
100
120
150
T
J
-- Junction Temperature (°C)
Fig. 12 – Power vs. Pulse Duration
70
60
50
40
30
20
10
0
0.01
0.1
1
10
100
0.01
100
Fig. 13 – Maximum Safe Operating Area
10
0
µ
1m
s
I
D
-- Drain Current (A)
10
10
10
0m
s
ms
R
DS(ON)
Limit
1
1s
s
10s
0.1
V
GS
= 10V
Single Pulse
on 1-in
2
2oz Cu.
T
A
= 25°C
0.1
1
DC
10
100
V
DS
-- Drain-Source Voltage (V)
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