PHOTO TRANSISTOR
光 電 晶 體
Part Number: TN2469TK
Absolute maximum ratings
Parameter
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Operating temperature range
Storage temperature range
Lead soldering temperature
(T
A
=25℃)
Symbol
P
D
V
CEO
V
ECO
T
OP
T
STG
T
SOL
Value
100
30
5
-20 ~+80
-20 ~+80
Unit
mW
V
V
℃
℃
260℃for 5 SEC (5mm [0.20”] from body)
Electro-optical characteristics
Parameter
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector-emitter saturation voltage
Rise time
Fall time
Collector dark current
On state collector current
(T
A
=25℃)
Test
Condition
I
C
= 100µA
I
B
= 0
I
E
= 100µA
I
B
= 0
I
C
=2 mA
I
B
=100µA
V
CE
= 5V
I
C
=1 mA
R
L
= 1000Ω
V
CE
= 20V
E
e
= 0mW/cm
2
V
CE
= 5V
E
e
= 1mW/cm
2
λ=940nm
4-2
Value
Symbol
Unit
Min Typ Max
V
(BR) CEO
V
(BR) ECO
V
CE (SAT)
T
R
T
F
I
CEO
I
(ON)
30
5
--
--
--
--
0.20
--
--
--
15
15
--
1.0
--
--
0.3
--
--
100
--
V
V
V
µS
µS
nA
mA