BF2040R-E6433 datasheet, PDF - EEWORLD Datasheet

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BF2040R-E6433: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size201KB，11 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BF2040R-E6433 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BF2040R-E6433 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
Reach Compliance Code	compliant
Configuration	Single
Maximum drain current (Abs) (ID)	0.04 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	DUAL GATE, ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.2 W
surface mount	YES
Base Number Matches	1

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BF2040...

Silicon N-Channel MOSFET Tetrode

•

For low noise , high gain controlled

input stages up to 1GHz

•

Operating voltage 5 V

•

Pb-free (RoHS compliant) package

•

Qualified according AEC Q101

ESD

(Electrostatic

discharge)

sensitive device, observe handling precaution!

Type

BF2040

BF2040R

BF2040W

Package

SOT143

SOT143R

SOT343

1=S

1=D

2=D

2=S

Pin Configuration

3=G2

3=G1

4=G1

4=G2

Marking

NFs

Maximum Ratings

Parameter

Drain-source voltage

Continuous drain current

Gate 1/ gate 2-source current

Gate 1 (external biasing)

Total power dissipation

≤

76 °C, BF2040, BF2040R

≤

94 °C, BF2040W

Storage temperature

Channel temperature

Thermal Resistance

Parameter

Channel - soldering point

BF2040, BF2040R

BF2040W

For

Symbol

±I

G1/2SM

G1SE

tot

Value

200

Unit

stg

Symbol

thchs

-55 ... 150

150

°C

Value

≤

370

≤

280

Unit

K/W

calculation of

thJA please refer to Application Note Thermal Resistance

2007-06-01

BF2040R-E6433 Related Products

	BF2040R-E6433	BF2040-E6814	BF2040-E6433	BF2040W-E6433	BF2040E6327	BF2040R-E6814	BF2040RE6814HTSA1	BF2040WE6814HTSA1	BF2040WH6814
Description	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	MOSFET N-CH 8V 40MA SOT-143R	MOSFET N-CH 8V 40MA SOT-343	Drain-source voltage (Vdss): 8V Continuous drain current (Id) (at 25°C): 40mA Gate-source threshold voltage: - Drain-source on-resistance: - Maximum power dissipation (Ta=25°C): 200mW Type: N channel N channel
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	-	-	-
Reach Compliance Code	compliant	unknown	compliant	compliant	unknown	compliant	compliant	-	-
Configuration	Single	Single	Single	Single	Single	Single	SINGLE	-	-
Maximum drain current (Abs) (ID)	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A	-	-	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	-
Operating mode	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, DEPLETION MODE	-	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	-	-	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	-
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	-	-	-
surface mount	YES	YES	YES	YES	YES	YES	YES	-	-
Base Number Matches	1	1	1	1	1	1	1	-	-

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