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BD136-10

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size56KB,1 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
Download Datasheet Parametric Compare View All

BD136-10 Overview

Transistor

BD136-10 Parametric

Parameter NameAttribute value
MakerTransys Electronics Limited
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
Transys
Electronics
L I M I T E D
TO-126 Plastic-Encapsulated Transistors
BD136/BD138/BD140
FEATURES
Power dissipation
P
CM:
1.25
W (Tamb=25℃)
1. EMITTER
2. COLLECTOR
3. BASE
TRANSISTOR (PNP)
TO-126
Collector current
-1.5
A
I
CM:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
123
unless otherwise specified)
Test
conditions
BD136
MIN
TYP
MAX
UNIT
-45
-60
-80
-45
-60
-80
-5
-0.1
-10
25
40
40
25
-0.5
-1
V
V
V
µA
µA
V
V
Collector-base breakdown voltage
V
(BR)CBO
Ic=-
100
µA, I
E
=0
BD138
BD140
BD136
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=-
30
mA, I
B
=0
BD138
BD140
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
I
E
=-
100
µA, I
C
=0
V
CB
=-
30
V, I
E
=0
V
EB
=-
5
V, I
C
=0
V
CE
=-
2
V, I
C
=-
5
Ma
BD136
250
160
DC current gain
h
FE(2)
V
CE
=-
2
V, I
C
=-
150
mA
BD138
BD140
h
FE(3)
Collector-emitter saturation voltage
Base-emitter voltage
V
CE(sat)
V
BE
V
CE
=-
2
V, I
C
=-
500
mA
I
C
=-
500
mA, I
B
=-
50
mA
V
CE
=-
2
V, I
C
=-
500
mA
CLASSIFICATION OF h
FE(2)
Rank
Range
6
40-100
10
63-160
16
100-250

BD136-10 Related Products

BD136-10 BD138-6 BD140-10 BD140-6 BD136-16
Description Transistor Transistor Transistor Transistor Transistor
Reach Compliance Code unknown unknown unknown unknown unknown
Maker Transys Electronics Limited - Transys Electronics Limited Transys Electronics Limited Transys Electronics Limited
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