LP0701
Low Threshold
P-Channel Enhancement-Mode
Lateral MOSFET
Ordering Information
BV
DSS
/
BV
DGS
-16.5V
R
DS(ON)
(max)
1.5Ω
I
D(ON)
(min)
-1.25A
V
GS(th)
(max)
-1.0V
Order Number / Package
TO-92
LP0701N3
SO-8
LP0701LG
Die
LP0701ND
Features
Ultra low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Freedom from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Advanced MOS Technology
These enhancement-mode (normally-off) transistors utilize a lat-
eral MOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and negative temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown. The low threshold voltage and low on-
resistance characteristics are ideally suited for hand held battery
operated applications.
Applications
Logic level interfaces
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
SGD
Package Options
(Note 1)
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
BV
DSS
BV
DGS
±
10V
-55°C to +150°C
300°C
NC
NC
S
G
1
2
3
4
TO-92
8
7
6
5
D
D
D
D
SO-8
top view
Note: See Package Outline section for dimensions.
7-23
LP0701
Thermal Characteristics
Package
I
D
(continuous)*
-0.5A
-0.7A
I
D
(pulsed)*
-1.25A
-1.25A
Power Dissipation
@ T
C
= 25
°
C
1W
1.5W
†
°
C/W
125
83
θ
jc
°
C/W
170
104
†
θ
ja
I
DR
-0.5A
-0.7A
I
DRM
*
-1.25A
-1.25A
TO-92
SO-8
*
†
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
-16.5
-0.5
-0.7
-1.0
-4.0
-100
-100
-1.0
-0.4
I
D(ON)
ON-State Drain Current
-0.6
-1.25
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
-1.2
500
700
120
100
40
250
125
60
20
20
30
30
-1.5
V
V
GS
= 0V, I
SD
= -500mA
ns
V
DD
=-15V, I
D
= -1.25A,
R
GEN
= 25Ω
pF
V
GS
= 0V, V
DS
= -15V, f = 1MHz
-1.0
-2.3
2.0
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
1.7
1.3
4.0
2.0
1.5
0.75
%/°C
m
Ω
A
Ω
Typ
Max
Unit
V
V
mV/°C
nA
nA
mA
A
Conditions
V
GS
= 0V, I
D
= -1mA
V
GS
= V
DS
, I
D
= -1mA
V
GS
= V
DS
, I
D
= -1mA
V
GS
=
±10V,
V
DS
= 0V
V
DS
= -15V, V
GS
= 0V
V
DS
= 0.8 Max Rating,
V
GS
= 0V, TA = 125°C
V
GS
= V
DS
= -2V
V
GS
= V
DS
= -3V
V
GS
= V
DS
= -5V
V
GS
= -2V, I
D
= -50mA
V
GS
= -3V, I
D
= -150mA
V
GS
= -5V, I
D
= -300mA
V
GS
= -5V, I
D
= -300mA
V
DS
= -15V, I
D
= -1A
Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
Note 2: All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
t
(ON)
t
d(ON)
0V
90%
OUTPUT
V
DD
10%
10%
V
DD
90%
t
r
90%
t
(OFF)
t
d(OFF)
t
F
INPUT
R
L
D.U.T.
OUTPUT
10%
PULSE
GENERATOR
R
gen
7-24
LP0701
Typical Performance Curves
Output Characteristics
-2.5
-2.5
Saturation Characteristics
V
GS
= -5V
-2.0
-2.0
V
GS
= -5V
-4V
I
D
(amperes)
-1.5
I
D
(amperes)
-1.5
-4V
-1.0
-3V
-1.0
-3V
-0.5
-2V
-1V
-0.5
-2V
-1V
0
0
-4
-8
-12
-16
0
0
-1
-2
-3
-4
-5
V
DS
(volts)
Transconductance vs. Drain Current
1.0
2
V
DS
(volts)
Power Dissipation vs. Case Temperature
V
DS
= -15V
0.8
T
A
= -55°C
SO-8
T
A
= 25°C
T
A
= 125°C
G
FS
(siemens)
0.6
P
D
(watts)
1
TO-92
0.4
0.2
0
0
0
-1.0
-2.0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
-10
1.0
T
C
(°C)
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
TO-92/SO-8 (pulsed)
I
D
(amperes)
-1.0
0.6
TO-92 (DC)
-0.1
0.4
SO-8 (DC)
TO-92
T
C
= 25°C
P
D
= 1W
0.2
T
C
= 25°C
-0.01
-0.1
-1.0
-10
-100
0
0.001
0.01
0.1
1.0
10
V
DS
(volts)
t
P
(seconds)
7-25
LP0701
Typical Performance Curves
BV
DSS
Variation with Temperature
10
1.1
8
On-Resistance vs. Drain Current
V
GS
= -2V
BV
DSS
(normalized)
V
GS
= -3V
R
DS(ON)
(ohms)
6
V
GS
= -5V
1.0
4
2
0.9
0
-50
0
50
100
150
0
-1
-2
-3
T
j
(°C)
Transfer Characteristics
-2
1.4
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
1.6
V
DS
= -15V
1.2
V
(th)
@ -1mA
1.4
T
A
= -55°C
I
D
(amperes)
T
A
= 25°C
-1
1.0
1.2
T
A
= 125°C
0.8
1.0
0.6
R
DS(ON)
@ -5V, -300mA
0.8
0
0.4
0
-1
-2
-3
-4
-5
-50
0
50
100
150
0.6
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
200
-10
T
j
(°C)
Gate Drive Dynamic Characteristics
f = 1MHz
-8
V
DS
= -10V
C (picofarads)
V
GS
(volts)
C
ISS
100
-6
-20V
238pF
C
OSS
-4
C
RSS
-2
0
0
-5
-10
-15
0
0
C
ISS
= 115pF
1
2
3
4
5
V
DS
(volts)
Q
G
(nanocoulombs)
7-26
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
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