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BUK9635-55-T

Description
TRANSISTOR 34 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size56KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BUK9635-55-T Overview

TRANSISTOR 34 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

BUK9635-55-T Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, ESD PROTECTED
Avalanche Energy Efficiency Rating (Eas)45 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)34 A
Maximum drain-source on-resistance0.035 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)136 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope suitable for surface
mounting. Using ’trench’ technology
the device features very low on-state
resistance and has integral zener
diodes giving ESD protection up to
2kV. It is intended for use in
automotive and general purpose
switching applications.
BUK9635-55
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 5 V
MAX.
55
34
85
175
35
UNIT
V
A
W
˚C
mΩ
PINNING - SOT404
PIN
1
2
3
mb
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2
1
3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
10
34
24
136
85
175
UNIT
V
V
V
A
A
A
W
˚C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
MIN.
-
MAX.
2
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
Minimum footprint, FR4
board
TYP.
-
50
MAX.
1.75
-
UNIT
K/W
K/W
April 1998
1
Rev 1.100

BUK9635-55-T Related Products

BUK9635-55-T BUK9635-55118 BUK9635-55/T3 BUK9635-55T/R BUK9635-55,118
Description TRANSISTOR 34 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power MOSFET TAPE13 PWR-MOS TRANSISTOR 34 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power TRANSISTOR 34 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power MOSFET N-CH 55V 34A D2PAK
Configuration SINGLE WITH BUILT-IN DIODE Single Dual Drain SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maker NXP - NXP NXP NXP
package instruction SMALL OUTLINE, R-PSSO-G2 - SMALL OUTLINE, R-PSSO-G2 PLASTIC, SMD, D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown - unknown unknown unknown
ECCN code EAR99 - EAR99 EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE, ESD PROTECTED - LOGIC LEVEL COMPATIBLE, ESD PROTECTED LOGIC LEVEL COMPATIBLE, ESD PROTECTED LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Avalanche Energy Efficiency Rating (Eas) 45 mJ - 45 mJ 45 mJ 45 mJ
Shell connection DRAIN - DRAIN DRAIN DRAIN
Minimum drain-source breakdown voltage 55 V - 55 V 55 V 55 V
Maximum drain current (ID) 34 A - 34 A 34 A 34 A
Maximum drain-source on-resistance 0.035 Ω - 0.035 Ω 0.035 Ω 0.035 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 - R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components 1 - 1 1 1
Number of terminals 2 - 2 2 2
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C - - 175 °C 175 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 136 A - 136 A 136 A 136 A
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
surface mount YES - YES YES YES
Terminal form GULL WING - GULL WING GULL WING GULL WING
Terminal location SINGLE - SINGLE SINGLE SINGLE
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON
Base Number Matches 1 - 1 1 1
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