BUX17C datasheet, PDF - EEWORLD Datasheet

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BUX17C: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size83KB，2 Pages; ManufacturerInchange Semiconductor

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BUX17C Overview

Transistor

BUX17C Parametric

Parameter Name	Attribute value
Maker	Inchange Semiconductor
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	350 V
Configuration	SINGLE
Minimum DC current gain (hFE)	7
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	150 W
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	2.5 MHz
VCEsat-Max	2 V
Base Number Matches	1

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INCHANGE Semiconductor

isc

Product Specification

isc

Silicon NPN Power Transistors

DESCRIPTION

·Collector-Emitter

Sustaining Voltage-

: V

CEO(SUS)

= 150V(Min)- BUX17

= 250V(Min)- BUX17A

= 300V(Min)- BUX17B

= 350V(Min)- BUX17C

·High

Switching Speed

·High

Power Dissipation

APPLICATIONS

·Designed

for use in off-line power supplies and is also well

suited for use in a wide range of inverter or converter circuits

and pulse-width-modulated regulators.

ABSOLUTE MAXIMUM RATINGS(T

a

=25℃)

SYMBOL

PARAMETER

BUX17

V

CEV

Collector-Emitter Voltage

V

BE

= -1.5V

BUX17A

BUX17B

BUX17C

BUX17

BUX17A

V

CEO(SUS)

Collector-Emitter Voltage

BUX17B

BUX17C

V

EBO

I

C

I

B

BUX17/A/B/C

VALUE

250

350

UNIT

V

400

450

150

250

V

300

350

6

10

2

150

200

-65~200

V

A

W

℃

Emitter-Base Voltage

Collector Current-Continuous

Base Current-Continuous

Collector Power Dissipation@T

C

=25℃

Junction Temperature

Storage Temperature

P

C

T

J

T

stg

THERMAL CHARACTERISTICS

SYMBOL

R

th j-c

PARAMETER

Thermal Resistance,Junction to Case

MAX

1.17

UNIT

℃/W

isc Website：www.iscsemi.cn

BUX17C Related Products

	BUX17C	BUX17A	BUX17
Description	Transistor	Transistor	Transistor
Maker	Inchange Semiconductor	Inchange Semiconductor	Inchange Semiconductor
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown	unknown	unknown
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	10 A	10 A	10 A
Collector-emitter maximum voltage	350 V	250 V	150 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	7	7	7
JEDEC-95 code	TO-3	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1
Number of terminals	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	150 W	150 W	150 W
surface mount	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	2.5 MHz	2.5 MHz	2.5 MHz
VCEsat-Max	2 V	2 V	2 V
Base Number Matches	1	1	1

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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