SIPMOS® Power Transistor
Features
•
N channel
•
BUZ 111SL
V
DS
I
D
55
80
V
A
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
Enhancement mode
R
DS(on)
0.007
Ω
•
Avalanche rated
•
Logic Level
•
dv/dt rated
•
175˚C operating temperature
Type
BUZ111SL
BUZ111SL E3045A
BUZ111SL E3045
Package
Ordering Code
Packaging
Pin 1
G
Pin 2 Pin 3
D
S
P-TO220-3-1 Q67040-S4002-A2 Tube
P-TO263-3-2 Q67040-S4002-A6 Tape and Reel
P-TO263-3-2 Q67040-S4002-A5 Tube
Maximum Ratings,
at
Tj
= 25 ˚C, unless otherwise specified
Parameter
Continuous drain current
Symbol
Value
80
80
320
700
30
6
kV/µs
mJ
Unit
A
I
D
T
C
= 25 ˚C,
1)
T
C
= 100 ˚C
Pulsed drain current
I
Dpulse
E
AS
E
AR
dv/dt
T
C
= 25 ˚C
Avalanche energy, single pulse
I
D
= 80 A,
V
DD
= 25 V,
R
GS
= 25
Ω
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
I
S
= 80 A,
V
DS
= 40 V, di/dt = 200 A/µs,
T
jmax
= 175 ˚C
Gate source voltage
Power dissipation
V
GS
P
tot
T
j ,
T
stg
±20
300
-55... +175
55/175/56
V
W
˚C
T
C
= 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Data Sheet
1
05.99
BUZ 111SL
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
Symbol
min.
Values
typ.
-
-
-
-
max.
0.5
62
62
40
K/W
Unit
R
thJC
R
thJA
R
thJA
-
-
-
-
Electrical Characteristics,
at
Tj
= 25 ˚C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
Symbol
min.
Values
typ.
-
1.6
max.
-
2
µA
-
-
-
0.1
-
10
1
100
100
nA
Ω
-
-
0.0085 0.01
0.0055 0.007
V
Unit
V
(BR)DSS
V
GS(th)
I
DSS
55
1.2
V
GS
= 0 V,
I
D
= 0.25 mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 240 µA
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 ˚C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 150 ˚C
Gate-source leakage current
I
GSS
R
DS(on)
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 80 A
V
GS
= 10 V,
I
D
= 80 A
1current limited by bond wire
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet
2
05.99
BUZ 111SL
Electrical Characteristics,
at
T
j = 25 ˚C, unless otherwise specified
Symbol
Values
Parameter
min.
Dynamic Characteristics
Transconductance
typ.
95
3850
1090
570
30
max.
-
4800
1357
715
45
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
30
-
-
-
-
S
pF
V
DS
≥2*
I
D
*R
DS(on)max
,
I
D
= 80 A
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
ns
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 80 A,
R
G
= 1.3
Ω
Rise time
t
r
-
37
56
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 80 A,
R
G
= 1.3
Ω
Turn-off delay time
t
d(off)
-
70
105
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 80 A,
R
G
= 1.3
Ω
Fall time
t
f
-
36
55
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 80 A,
R
G
= 1.3
Ω
Data Sheet
3
05.99
BUZ 111SL
Electrical Characteristics,
at
T
j = 25 ˚C, unless otherwise specified
Parameter
Dynamic Characteristics
Gate to source charge
Symbol
min.
Values
typ.
12
61
155
3.4
max.
18
91.5
232
-
V
nC
Unit
Q
gs
Q
gd
Q
g
V
(plateau)
-
-
-
-
V
DD
= 40 V,
I
D
= 80 A
Gate to drain charge
V
DD
= 40 V,
I
D
= 80 A
Gate charge total
V
DD
= 40 V,
I
D
= 80 A,
V
GS
= 0 to 10 V
Gate plateau voltage
V
DD
= 40 V,
I
D
= 80 A
Reverse Diode
Inverse diode continuous forward current
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
-
-
-
-
-
1.25
105
0.31
80
320
1.8
157
0.47
A
T
C
= 25 ˚C
Inverse diode direct current,pulsed
T
C
= 25 ˚C
Inverse diode forward voltage
V
ns
µC
V
GS
= 0 V,
I
F
= 160 A
Reverse recovery time
V
R
= 30 V,
I
F
=I
S
, di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S
, di
F
/dt = 100 A/µs
Data Sheet
4
05.99
BUZ 111SL
Power Dissipation
Drain current
P
tot
=
f
(T
C
)
BUZ111SL
I
D
=
f
(T
C
)
parameter:
V
GS
≥
10 V
BUZ111SL
320
W
90
A
240
70
60
P
tot
I
D
50
40
30
20
10
0
0
100 120 140 160
˚C
190
200
160
120
80
40
0
0
20
40
60
80
20
40
60
80
100 120 140 160
˚C
190
T
C
T
C
Safe operating area
Transient thermal impedance
I
D
=
f
(V
DS
)
parameter :
D
= 0 ,
T
C
= 25 ˚C
10
3
BUZ111SL
Z
thJC
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
1
BUZ111SL
K/W
A
tp
= 29.0µs
10
0
R
DS
(o
Z
thJC
I
D
n)
=
V
DS
10
2
/I
D
100 µs
10
-1
10
-2
D = 0.50
1 ms
0.20
10
-3
0.10
0.05
0.02
10
-4
10
1
10 ms
DC
single pulse
0.01
10
0 -1
10
10
0
10
1
V
10
2
10
-5 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
t
p
Data Sheet
5
05.99
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