Semiconductor Laser
LNC703PS
Semiconductor Laser for LBP(Laser Beam Printers)
ø5.6
+0
–0.025
ø4.3±0.1
ø3.55±0.1
Unit : mm
2
Overview
The LNC703PS is a near infrared GaAlAs laser diode which
provides continuous oscillation in single mode and is stable at low
operating current. This product is characterized by a low operating
current and low drooping, making it suitable for a wide range of
optical information equipment.
ø1.0 min.
0.4±0.1
110˚±1˚
LD
1
Junction plane
Reference plane
1.0±0.1
3
PD
2.3±0.2
1.27
0.25
Reference slot
Kovar glass
LD pellet
Reference plane
ø1.2max.
3-ø0.45
2
High output (15 mW) for increased printing speed
Stable single horizontal mode oscillation
Low astigmatic difference
Low drooping
6.5±0.5
0.5
max.
1
ø2.0
Bottom view
Low current operations : 40 mA (with 12 mW output)
1.2±0.1
Features
3
1: LD Anode
2: Common Case
3: PD Cathode
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Radiant power
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
Laser
PIN
Symbol
P
O
V
R
V
R
(PIN)
P
d
(PIN)
T
opr
T
stg
Ratings
15
2
30
100
–10 to +60
– 40 to +80
Unit
mW
V
V
mW
˚C
˚C
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Radiation angle
Horizontal direction
Vertical direction
Symbol
I
th
I
OP
V
OP
λ
L
θ
//*
θ
⊥
*
η
I
R
I
P
θ
X
θ
Y
D
r
CW
Conditions
P
O
= 12mW
P
O
= 12mW
P
O
= 12mW
P
O
= 12mW
P
O
= 12mW
P
O
= 9mW/I(12mW) – I(3mW)
V
R
(PIN) = 5V
P
O
= 12mW, V
R
(PIN) = 5V
P
O
= 12mW
P
O
= 12mW
P
O
= 12mW, f = 600Hz, duty10% to 90%
min
10
30
775
7
18
0.4
typ
20
40
2.0
785
10
25
0.7
0.3
max
35
70
2.5
795
12
32
1.0
0.1
Unit
mA
mA
V
nm
deg.
deg.
mW/mA
µ
A
mA
deg.
deg.
%
Differential efficiency
Reverse current (DC)
PIN photo current
Optical axis
accuracy
Droop
Oscillation mode
*
X direction
Y direction
–2.0
–3.0
4
+2.0
+3.0
10
Single horizontal mode
θ
//
and
θ
⊥
are the angles where the optical intencity is a half of its max. value. ( half full angle )
1
Semiconductor Laser
LNC703PS
P
O
— I
OP
15
200
Ta = 25˚C
12.5
I—V
100
Far field pattern
80
100
I (mA)
10.0
Relative radiant power
∆P
O
Radiant power P
O
(mW)
60
7.5
0
Current
40
θ
//
20
θ
⊥
5.0
–100
2.5
0
0
20
40
60
–200
–4
–2
0
2
4
0
40
20
0
20
40
Operating current I
OP
(mA)
Voltage V (V)
Angle
θ
(deg.)
I
th
— Ta
10
2
10
3
I
OP
— Ta
P
O
= 12mW
500
I
P
— Ta
V
R
(PIN) = 5V
P
O
= 12mW
I
OP
(mA)
I
th
(mA)
I
P
(µA)
PIN photo current
10
30
50
70
10
2
10
– 10
400
Threshold current
Operating current
10
300
200
1
– 10
10
30
50
70
100
–10
10
30
50
70
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
P
O
— Ta
20
10
2
I
d
— Ta
V
R
(PIN) = 30V
10
Radiant power P
O
(mW)
PIN dark current I
d
(nA)
10
30
50
70
15
1
10
10
–1
5
10
–2
0
– 10
10
–3
– 10
10
30
50
70
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
2
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