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LN65

Description
GaAs Infrared Light Emitting Diode
CategoryLED optoelectronic/LED    photoelectric   
File Size390KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

LN65 Overview

GaAs Infrared Light Emitting Diode

LN65 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerPanasonic
package instructionROHS COMPLIANT PACKAGE-2
Reach Compliance Codeunknow
Other featuresSIDE VIEW
ConfigurationSINGLE
Maximum forward current0.1 A
Number of functions1
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Optoelectronic device typesINFRARED LED
Nominal output power5.5 mW
peak wavelength950 nm
shapeROUND
size3.5 mm
This product complies with the RoHS Directive (EU 2002/95/EC).
Infrared Light Emitting Diodes
LN65
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency: P
O
= 5.5 mW (typ.)
Good radiant power output linearity with respect to input current
Suited for use in high-speed modulation
Infrared light emission close to monochromatic light:
λ
P
= 950 nm (typ.)
Parameter
Symbol
P
D
I
F
Power dissipation
Forward current
Reverse voltage
Pulse forward current
*
I
FP
V
R
Operating ambient temperature
Storage temperature
T
opr
T
stg
Note) *: f = 100 Hz, Duty cycle = 0.1%
Electro-Optical Characteristics
T
a
= 25°C±3°C
Parameter
Symbol
P
O
I
R
Radiant power
*
Reverse current
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Rating
160
1.5
3
100
Unit
mA
A
V
mW
–25 to +85
°C
°C
–40 to +100
Conditions
Min
4.3
Typ
5.5
1.3
50
50
35
Max
10
I
F
= 100 mA
V
R
= 3 V
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
1.6
V
R
= 0 V, f = 1 MHz
950
The angle when the radiant power is halved.
M
ain
Di
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
a
= 25°C
2. Cutoff frequency: 1 MHz
f
C
: 10
×
log
Unit
mW
µA
V
pF
nm
nm
°
Ma
int
en
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
P
O
at f = f
C
P
O
at f = 50 kHz
an
Half-power angle
ce
/D
= –3
Spectral half band width
isc
Peak emission wavelength
Pl
3. *: A light detection element uses a silicon diode have proofread a load with a standard device.
on
λ
P
θ
tin
Δλ
Terminal capacitance
C
t
ue
Forward voltage
V
F
di
Publication date: January 2009
SHC00015DED
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