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BYX135GT/R

Description
DIODE 0.05 A, 5000 V, SILICON, SIGNAL DIODE, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size74KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BYX135GT/R Overview

DIODE 0.05 A, 5000 V, SILICON, SIGNAL DIODE, Signal Diode

BYX135GT/R Parametric

Parameter NameAttribute value
MakerNXP
package instructionE-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-LALF-W2
Number of components1
Number of terminals2
Maximum output current0.05 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage5000 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D354
BYX135G
High-voltage car ignition diode
Product specification
Supersedes data of 1998 Dec 04
2000 Feb 29

BYX135GT/R Related Products

BYX135GT/R SLRN215800ACDDBG
Description DIODE 0.05 A, 5000 V, SILICON, SIGNAL DIODE, Signal Diode Array/Network Resistor, Isolated, Thin Film, 0.1W, 1580ohm, 0.2% +/-Tol, -50,50ppm/Cel, 1015,
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Number of terminals 2 4
Package form LONG FORM SMT
technology AVALANCHE THIN FILM
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