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3.0SMCJ170C-GT3

Description
Trans Voltage Suppressor Diode,
CategoryDiscrete semiconductor    diode   
File Size286KB,5 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Download Datasheet Parametric View All

3.0SMCJ170C-GT3 Overview

Trans Voltage Suppressor Diode,

3.0SMCJ170C-GT3 Parametric

Parameter NameAttribute value
package instructionR-PDSO-C2
Reach Compliance Codecompliant
Other featuresEXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Maximum breakdown voltage231 V
Minimum breakdown voltage189 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityBIDIRECTIONAL
Maximum repetitive peak reverse voltage170 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Base Number Matches1
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0210, Rev. -
3.0SMCJ-GT3 SERIES
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Green Products
Ordering Information
Device
3.0SMCJ SERIES
Package
SMC (Pb-Free)
Shipping
3000pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
FAX (86) 25-87123900
World Wide Web Site - http://www.sangdest.com.cn
E-Mail Address - sales@ sangdest.com.cn
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