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IXFK26N120P

Description
Power Field-Effect Transistor, 26A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size117KB,4 Pages
ManufacturerIXYS
Environmental Compliance
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IXFK26N120P Overview

Power Field-Effect Transistor, 26A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

IXFK26N120P Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-264AA
package instructionTO-264, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)1500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1200 V
Maximum drain current (Abs) (ID)26 A
Maximum drain current (ID)26 A
Maximum drain-source on-resistance0.46 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-264AA
JESD-30 codeR-PSFM-T3
JESD-609 codee1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)960 W
Maximum pulsed drain current (IDM)60 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Preliminary Technical Information
Polar
TM
Power MOSFET
IXFK26N120P
IXFX26N120P
HiPerFET
TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V
DSS
I
D25
t
rr
R
DS(on)
= 1200V
= 26A
460mΩ
Ω
300ns
TO-264 (IXFK)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25°C
Maximum Ratings
1200
1200
±
30
±
40
26
60
13
60
1.5
15
960
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb
g
g
G = Gate
S = Source
G
D
S
(TAB)
PLUS247 (IXFX)
(TAB)
D = Drain
TAB = Drain
Features:
Fast intrinsic diode
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages:
Easy to mount
Space savings
High power density
1.6 mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque
Mounting force
(IXFK)
(IXFX)
(IXFK)
(IXFX)
300
260
1.13/10
20..120 /4.5..27
10
6
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
1200
3.5
6.5
±
200
50
5.0
460
V
V
nA
μA
mA
Applications:
High Voltage Switched-mode and
resonant-mode
power supplies
High Voltage Pulse Power
Applications
High Voltage Discharge circuits in
Laser Pulsers
Spark Igniters, RF Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2007 IXYS CORPORATION, All rights reserved
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