LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-
sistors are designed to replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single device. In the
LMUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package
which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb-Free Package is available
1
2
3
LMUN5311DW1T1
Series
6
5
4
SOT-363/SC-88
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
6
5
4
and Q
2
, – minus sign for Q
1
(PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature
1. FR–4 @ Minimum Pad
Symbol Value
50
V
CBO
50
V
CEO
100
I
C
Unit
Vdc
Vdc
mAdc
Q
2
R
2
R
1
1
2
R
1
R
2
Q
1
3
Symbol
P
D
Max
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
Unit
mW
mW/°C
°C/W
MARKING DIAGRAM
6
5
4
XX
1
2
3
R
θJA
670 (Note 1.)
490 (Note 2.)
xx = Device Marking
=
(See Page 2)
Symbol
P
D
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
Unit
mW
mW/°C
°C/W
°C/W
°C
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
R
θJA
R
θJL
T
J
, T
stg
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
–55 to +150
2. FR–4 @ 1.0 x 1.0 inch Pad
LMUN5311DW–1/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES
Device
LMUN5311DW1T1
LMUN5311DW1T1G
LMUN5312DW1T1
LMUN5312DW1T1G
LMUN5313DW1T1
LMUN5313DW1T1G
LMUN5314DW1T1
LMUN5314DW1T1G
LMUN5315DW1T1
LMUN5315DW1T1G
LMUN5316DW1T1
LMUN5316DW1T1G
LMUN5330DW1T1
LMUN5330DW1T1G
LMUN5331DW1T1
LMUN5331DW1T1G
LMUN5332DW1T1
LMUN5332DW1T1G
LMUN5333DW1T1
LMUN5333DW1T1G
LMUN5334DW1T1
LMUN5334DW1T1G
LMUN5335DW1T1
LMUN5335DW1T1G
Package
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
Marking
11
11(Pb-Free)
12
12(Pb-Free)
13
13(Pb-Free)
14
14(Pb-Free)
15
15(Pb-Free)
16
16(Pb-Free)
30
30(Pb-Free)
31
31(Pb-Free)
32
32(Pb-Free)
33
33(Pb-Free)
34
34(Pb-Free)
35
35(Pb-Free)
R1(K)
10
10
22
22
47
47
10
10
10
10
4.7
4.7
1
1
2.2
2.2
4.7
4.7
4.7
4.7
22
22
2.2
2.2
1
1
2.2
2.2
4.7
4.7
47
47
47
47
47
47
R2(K)
10
10
22
22
47
47
47
47
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
LMUN5311DW-2/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, − minus sign for Q
1
(PNP) omitted) (Continued)
Characteristic
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
LMUN5311DW1T1
LMUN5312DW1T1
LMUN5313DW1T1
LMUN5314DW1T1
LMUN5315DW1T1
LMUN5316DW1T1
LMUN5330DW1T1
LMUN5331DW1T1
LMUN5332DW1T1
LMUN5333DW1T1
LMUN5334DW1T1
LMUN5335DW1T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
−
60
100
140
140
350
350
5.0
15
30
200
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
Vdc
Symbol
Min
Typ
Max
Unit
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) LMUN5330DW1T1/LMUN5331DW1T1
(I
C
= 10 mA, I
B
= 1 mA) LMUN5315DW1T1/LMUN5316DW1T1
LMUN5332DW1T1/LMUN5333DW1T1/LMUN5334DW1T1
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
LMUN5311DW1T1
LMUN5312DW1T1
LMUN5314DW1T1
LMUN5315DW1T1
LMUN5316DW1T1
LMUN5330DW1T1
LMUN5331DW1T1
LMUN5332DW1T1
LMUN5333DW1T1
LMUN5334DW1T1
LMUN5335DW1T1
LMUN5313DW1T1
V
CE(sat)
V
OL
−
−
−
−
−
−
−
−
−
−
−
−
V
OH
LMUN5330DW1T1
LMUN5315DW1T1
LMUN5316DW1T1
LMUN5333DW1T1
LMUN5311DW1T1
LMUN5312DW1T1
LMUN5313DW1T1
LMUN5314DW1T1
LMUN5315DW1T1
LMUN5316DW1T1
LMUN5330DW1T1
LMUN5331DW1T1
LMUN5332DW1T1
LMUN5333DW1T1
LMUN5334DW1T1
LMUN5335DW1T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
0.8
0.17
−
0.8
0.055
0.38
0.038
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
1.0
0.21
−
1.0
0.1
0.47
0.047
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
1.2
0.25
−
1.2
0.185
0.56
0.056
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
Vdc
Input Resistor
k
W
Resistor Ratio LMUN5311DW1T1/LMUN5312DW1T1/LMUN5313DW1T1
LMUN5314DW1T1
LMUN5315DW1T1/LMUN5316DW1T1
LMUN5330DW1T1/LMUN5331DW1T1/LMUN5332DW1T1
LMUN5333DW1T1
LMUN5334DW1T1
LMUN5335DW1T1
4. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
R1/R2
LMUN5311DW-3/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, − minus sign for Q
1
(PNP) omitted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
LMUN5311DW1T1
LMUN5312DW1T1
LMUN5313DW1T1
LMUN5314DW1T1
LMUN5315DW1T1
LMUN5316DW1T1
LMUN5330DW1T1
LMUN5331DW1T1
LMUN5332DW1T1
LMUN5333DW1T1
LMUN5334DW1T1
LMUN5335DW1T1
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
−
−
nAdc
nAdc
mAdc
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 3) (I
C
= 2.0 mA, I
B
= 0)
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ALL LMUN5311DW1T1 SERIES DEVICES
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
0
−50
R
qJA
= 490°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
LMUN5311DW-4/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5311DW1T1 NPN TRANSISTOR
1
I
C
/I
B
= 10
T
A
= −25°C
25°C
0.1
75°C
1000
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 10 V
T
A
= 75°C
25°C
−25°C
100
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (mA)
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
100
75°C
IC, COLLECTOR CURRENT (mA)
10
1
0.1
0.01
25°C
T
A
= −25°C
Cob , CAPACITANCE (pF)
3
2
1
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
T
A
= −25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
LMUN5311DW-5/29
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