LMUN5235T1G datasheet, PDF - EEWORLD Datasheet

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LMUN5235T1G: DescriptionPRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323; CategoryDiscrete semiconductor The transistor; File Size129KB，10 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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LMUN5235T1G Overview

PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323

LMUN5235T1G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	LRC
package instruction	,
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	80
Number of components	1
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.31 W
surface mount	YES
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network con-

sisting of two resistors; a series base resistor and a base–emitter resistor.

The BRT eliminates these individual components by integrating them into a

single device. The use of a BRT can reduce both system cost and board

space. The device is housed in the SC–70/SOT–323 package which is

designed for low power surface mount applications.

•

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

The SC–70/SOT–323 package can be soldered using wave or

LMUN5211T1

SERIES

SC-70 / SOT-323

PIN 1

BASE

(INPUT)

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

reflow. The modified gull–winged leads absorb thermal stress

during soldering eliminating the possibility of damage to the die.

• Available in 8 mm embossed tape and reel

Use the Device Number to order the 7 inch/3000 unit reel.

• Pb-Free package is available

MARKINGDIAGRAM

DEVICE MARKING INFORMATION

See specific marking information in the device marking table on page 2

of this data sheet.

8x = Specific Device Code

x = (See Marking Table)

M= Date Code

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

CBO

CEO

Value

100

Unit

Vdc

mAdc

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation

= 25°C

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

Junction and Storage

Temperature Range

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

Symbol

Max

202 (Note 1.)

310 (Note 2.)

1.6 (Note 1.)

2.5 (Note 2.)

618 (Note 1.)

403 (Note 2.)

280 (Note 1.)

332 (Note 2.)

–55 to +150

Unit

mW/°C

°C/W

°C

θJA

θJL

stg

LMUN5211T1 Series–1/10

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