LMUN5233DW1T1G datasheet, PDF - EEWORLD Datasheet

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LMUN5233DW1T1G: DescriptionSMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size165KB，10 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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LMUN5233DW1T1G Overview

SMALL SIGNAL TRANSISTOR

LMUN5233DW1T1G Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	LRC
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	80
Number of components	2
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.385 W
surface mount	YES
Transistor component materials	SILICON

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LESHAN RADIO COMPANY, LTD.

Dual Bias ResistorTransistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base–emitter resistor. These

digital transistors are designed to replace a single device and its external resistor bias network.

The BRT eliminates these individual components by integrating them into a single device. In

the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which

is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Pb-Free Package is available

LMUN5211DW1T1

Series

SC-88/SOT-363

MAXIMUM RATINGS

Rating

= 25°C unless otherwise noted, common for Q

and Q

)

Symbol Value

CBO

CEO

100

Unit

Vdc

mAdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation

= 25°C

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

Characteristic

(Both Junctions Heated)

Total Device Dissipation

= 25°C

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

Junction and Storage

Temperature

1. FR–4 @ Minimum Pad

θJA

θJL

, T

stg

Symbol

θJA

Symbol

Max

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

670 (Note 1.)

490 (Note 2.)

Unit

mW/°C

°C/W

MARKING DIAGRAM

7X = Device Marking

(See Page 2)

Max

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

493 (Note 1.)

325 (Note 2.)

188 (Note 1.)

208 (Note 2.)

–55 to +150

Unit

mW/°C

°C/W

°C

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of

this data sheet.

2. FR–4 @ 1.0 x 1.0 inch Pad

LMUN5211DW–1/10

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