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LMUN5231DW1T1G

Description
SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size165KB,10 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric View All

LMUN5231DW1T1G Overview

SMALL SIGNAL TRANSISTOR

LMUN5231DW1T1G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerLRC
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)8
Number of components2
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.385 W
surface mountYES
Transistor component materialsSILICON
LESHAN RADIO COMPANY, LTD.
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb-Free Package is available
LMUN5211DW1T1
Series
6
5
4
1
2
3
SC-88/SOT-363
6
5
4
MAXIMUM RATINGS
Rating
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Symbol Value
V
CBO
V
CEO
I
C
50
50
100
Unit
Vdc
Vdc
mAdc
Q
2
R
2
R
1
1
2
R
1
R
2
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature
1. FR–4 @ Minimum Pad
R
θJA
R
θJL
T
J
, T
stg
Symbol
P
D
R
θJA
Symbol
P
D
Q
1
3
Max
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
670 (Note 1.)
490 (Note 2.)
Unit
mW
mW/°C
°C/W
MARKING DIAGRAM
6
5
4
7X
1
2
3
7X = Device Marking
=
(See Page 2)
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
–55 to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
2. FR–4 @ 1.0 x 1.0 inch Pad
LMUN5211DW–1/10
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