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LMUN5215DW1T1G

Description
SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size165KB,10 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric View All

LMUN5215DW1T1G Overview

SMALL SIGNAL TRANSISTOR

LMUN5215DW1T1G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerLRC
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)160
Number of components2
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.385 W
surface mountYES
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
LESHAN RADIO COMPANY, LTD.
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb-Free Package is available
LMUN5211DW1T1
Series
6
5
4
1
2
3
SC-88/SOT-363
6
5
4
MAXIMUM RATINGS
Rating
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Symbol Value
V
CBO
V
CEO
I
C
50
50
100
Unit
Vdc
Vdc
mAdc
Q
2
R
2
R
1
1
2
R
1
R
2
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature
1. FR–4 @ Minimum Pad
R
θJA
R
θJL
T
J
, T
stg
Symbol
P
D
R
θJA
Symbol
P
D
Q
1
3
Max
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
670 (Note 1.)
490 (Note 2.)
Unit
mW
mW/°C
°C/W
MARKING DIAGRAM
6
5
4
7X
1
2
3
7X = Device Marking
=
(See Page 2)
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
–55 to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
2. FR–4 @ 1.0 x 1.0 inch Pad
LMUN5211DW–1/10
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