High Speed Super Low Power SRAM
8K-Word By 8 Bit
WS6264
GENERAL DESCRIPTION
The
WS6264
is a high performance, high speed and super low power CMOS Static Random
Access Memory organized as 8,192 words by 8bits and operates from a single 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed, super low power features and
maximum access time of 70ns in 5.0V operation. Easy memory expansion is provided by using two chip
enable inputs (/CE1, CE2) and active LOW output enable (/OE).
The
WS6264
has an automatic power down feature, reducing the power consumption significantly
when chip is deselected. The
WS6264
is available in JEDEC standard 28-pin SOP(300 mil) and PDIP
(600 mil) packages.
FEATURES
Operation voltage : 4.5 ~ 5.5V
Ultra low power consumption:
Operating current 1mA@1MHz & CMOS standby current 1.0uA (Typ.) in Vcc=5.0V
High speed access time: 70ns.
Automatic power down when chip is deselected.
Three state outputs and TTL compatible.
Data retention supply voltage as low as 2.0V.
Easy expansion with /CE1, CE2 and /OE options.
PRODUCT FAMILY
Product Family
WS6264LLFP
WS6264LLP
WS6264LLFPI
WS6264LLPI
0~70 C
o
Operating Temp.
Vcc Range
Speed (ns)
Standby Current (Typ.)
I
CCSB1
1.0uA
Package Type
28 SOP
4.5~5.5V
70
28 PDIP
28 SOP
28 PDIP
o
-40~85 C
70
1.0uA
Rev. 1.0
1
High Speed Super Low Power SRAM
8K-Word By 8 Bit
WS6264
PIN CONFIGURATIONS
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28L SOP
28L PDIP
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
CE2
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
FUNCTIONAL BLOCK DIAGRAM
Rev. 1.0
2
High Speed Super Low Power SRAM
8K-Word By 8 Bit
WS6264
PIN DESCRIPTIONS
Name
A0 – A12
Type
Input
Function
Address inputs for selecting one of the 8,192 x 8 bit words in the RAM
/CE1 is active LOW and CE2 is active HIGH. Both chip enables must be
/CE1,CE2
Input
active when data read from or write to the device. If either chip enable is not
active, the device is deselected and in a standby power down mode. The DQ
pins will be in high impedance state when the device is deselected.
The Write enable input is active LOW. It controls read and write operations.
/WE
Input
With the chip selected, when /WE is HIGH and /OE is LOW, output data will
be present on the DQ pins, when /WE is LOW, the data present on the DQ
pins will be written into the selected memory location.
The output enable input is active LOW. If the output enable is active while the
/OE
Input
chip is selected and the write enable is inactive, data will be present on the
DQ pins and they will be enabled. The DQ pins will be in the high impedance
state when /OE is inactive.
DQ0~DQ7
Vcc
Gnd
NC
I/O
Power
Power
These 8 bi-directional ports are used to read data from or write data into the
RAM.
Power Supply
Ground
No connection
TRUTH TABLE
MODE
Standby
Output
Disable
Read
Write
/CE1
H
X
L
L
L
CE2
X
L
H
H
H
/WE
X
X
H
H
L
/OE
X
X
H
L
X
DQ0~7
High Z
High Z
D
OUT
D
IN
Vcc Current
I
CCSB
, I
CCSB1
I
CC
I
CC
I
CC
Rev. 1.0
3
High Speed Super Low Power SRAM
8K-Word By 8 Bit
WS6264
Rating
-0.5 to Vcc+0.5
-40 to +125
-65 to +150
1.0
50
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Unit
V
O
O
C
C
W
mA
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0~70
o
C
-40~85
o
C
Vcc
4.5 ~ 5.5V
4.5 ~ 5.5V
CAPACITANCE
(1)
(TA=25℃,f=1.0MHz)
Symbol
C
IN
C
DQ
Parameter
Input Capacitance
Input/Output Capacitance
Conduction
VIN=0V
VDI/O=0V
MAX.
8
10
Unit
pF
pF
1.This parameter is guaranteed, and not 100% tested.
Rev. 1.0
4
High Speed Super Low Power SRAM
8K-Word By 8 Bit
WS6264
( TA =
0 ~70 C, Vcc = 5.0V)
)
o
o
DC ELECTRICAL CHARACTERISTICS
Name
V
IL
V
IH
I
IL
I
OL
V
OL
V
OH
I
CC
I
CCSB
Parameter
Guaranteed Input Low
Voltage
(2)
Guaranteed Input High
Voltage
(2)
Input Leakage Current
Vcc=5.0V
Test Condition
MIN
-0.5
TYP
(1)
MAX
0.8
Unit
V
Vcc=5.0V
V
CC
=MAX, V
IN
=0 to V
CC
V
CC
=MAX, /CE1=V
Ih
, or
2.2
-1
Vcc+0.5
1
V
uA
Output Leakage Current
CE2= V
IL,
or /OE=V
Ih
,or
/WE= V
IL
V
IO
=0V to V
CC
-1
1
uA
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
TTL Standby Supply
V
CC
=MAX, I
OL
= 1mA
V
CC
=MIN, I
OH
= -1mA
/CE1=V
IL
, I
DQ
=0mA,
F=F
MAX
=1/ t
RC
/CE1=V
IH
, I
DQ
=0mA,
/CE1≧V
CC
-0.2V, CE2= 0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V,
o
0.4
2.4
V
V
30
mA
10
mA
I
CCSB1
CMOS Standby Current
1
10
uA
1. Typical characteristics are at TA = 25 C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are
included.
Rev. 1.0
5
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