Power Transistors
2SD2659
Silicon NPN triple diffusion planar type
Unit: mm
For power switching
■
Features
•
High forward current transfer ratio h
FE
•
Satisfactory linearity of forward current transfer ratio h
FE
•
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
9.9
±0.3
3.0
±0.5
4.6
±0.2
2.9
±0.2
13.7
±0.2
4.2
±0.2
Solder Dip
15.0
±0.5
φ
3.2
±0.1
1.4
±0.2
1.6
±0.2
0.8
±0.1
2.6
±0.1
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
T
j
T
stg
T
C
=
25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
80
60
6
3
6
20
2
150
−55
to
+150
°C
°C
Unit
V
0.55
±0.15
2.54
±0.30
5.08
±0.50
1
2
3
V
V
A
A
W
B
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
E
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Symbol
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
f
T
Conditions
I
C
=
10 mA, I
B
=
0
V
CB
=
80 V, I
E
=
0
V
CE
=
60 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
4.0 V, I
C
=
0.5 A
I
C
=
2.0 A, I
B
=
0.05 A
V
CE
=
12 V, I
C
=
0.2 A, f
=
10 MHz
50
500
Min
60
100
100
100
1 500
1.2
Typ
Max
Unit
V
µA
µA
µA
V
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00292AED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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•
Any applications other than the standard applications intended.
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL
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