AF70N02
N-Channel Enhancement Mode Power MOSFET
Features
-Low Gate Charge
-Simple Drive Requirement
-Fast Switching
-Pb Free Plating Product
General Description
The TO-252 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
Product Summary
BV
DSS
(V)
25
R
DS(ON)
(mΩ)
9
I
D
(A)
66
Pin Assignments
(Front View)
Pin Descriptions
Pin Name
3
2
1
D
G
S
Description
Source
Gate
Drain
S
G
D
Ordering information
A X
Feature
F :MOSFET
PN
70N02 X X
Package
D: TO-252
Packing
Blank : Tube or Bulk
A : Tape & Reel
Block Diagram
D
S
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Aug 10, 2005
1/6
AF70N02
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
=10V
Pulsed Drain Current
(Note 1)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
T
C
=25ºC
T
C
=100ºC
T
C
=25ºC
Rating
25
±20
66
42
210
66
0.53
-55 to 150
-55 to 150
Units
V
V
A
A
W
W/ºC
ºC
ºC
Thermal Data
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction- Ambient
Max.
Max.
Maximum
1.9
110
Units
ºC/W
ºC/W
Electrical Characteristics
(T
J
=25ºC unless otherwise noted)
Symbol
BV
DSS
∆BV
DSS
/∆T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage
Current(T
J
=25ºC)
Drain-Source Leakage
Current(T
J
=150ºC)
Gate Source Leakage
Total Gate Charge
(Note 2)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 2)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=250uA
Reference to 25ºC,
I
D
=1mA
V
GS
=10V, I
D
=33A
V
GS
=4.5V, I
D
=20A
V
DS
= V
GS
, I
D
=250uA
V
DS
=10V, I
D
=33A
V
DS
=25V, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
GS
=±20V
I
D
=33A
V
DS
=20V
V
GS
=5V
V
DS
=15V
I
D
=33A
R
G
=3.3Ω, V
GS
=10V
R
D
=0.45Ω
V
GS
=0V
V
DS
=25V,
f=1.0MHz
Min.
25
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Limits
Typ.
-
0.037
-
-
-
28
-
-
-
23
3
17
8.8
95
24
14
790
475
195
Max.
-
-
9
18
3
-
1
uA
25
±100
-
-
-
-
-
-
-
-
-
-
nA
nC
Unit
V
V/ºC
mΩ
V
S
nS
pF
Source-Drain Diode
Sym.
I
S
I
SM
V
SD
Parameter
Test Conditions
Continuous Source Current (Body Diode) V
D
=V
G
=0V, V
S
=1.26V
Pulsed Source Current (Body Diode)
(Note 1)
Min.
-
-
-
Typ.
-
-
-
Max.
66
210
1.26
Unit
A
A
V
Forward On Voltage
(Note 2)
T
J
=25ºC, I
S
=66A,
V
GS
=0V
Anachip Corp.
www.anachip.com.tw
2/6
Rev. 1.0
Aug 10, 2005
AF70N02
N-Channel Enhancement Mode Power MOSFET
Drain-Source Avalanche Ratings
Sym.
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
Test Conditions
V
DD
=25V, I
D
=35A,
L=100uH, V
GS
=10V
Min.
-
-
Typ.
-
-
Max.
61
35
Unit
mJ
A
Note 1:
Pulse width limited by safe operating area.
Note 2:
Pulse width < 300us, duty cycle < 2%.
Typical Performance Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Anachip Corp.
www.anachip.com.tw
3/6
Rev. 1.0
Aug 10, 2005
AF70N02
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics (Continued)
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Anachip Corp.
www.anachip.com.tw
Fig 10. Typical Capacitance Characteristics
Rev. 1.0
4/6
Aug 10, 2005
AF70N02
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics (Continued)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Anachip Corp.
www.anachip.com.tw
5/6
Rev. 1.0
Aug 10, 2005
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