5SMX12L2505 datasheet, PDF - EEWORLD Datasheet

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5SMX12L2505: DescriptionInsulated Gate Bipolar Transistor, 50A I(C), 2500V V(BR)CES, N-Channel, 12.40 X 12.40 MM, DIE-2; CategoryDiscrete semiconductor The transistor; File Size90KB，2 Pages; ManufacturerABB; Websitehttp://www.abb.com/

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5SMX12L2505 Overview

Insulated Gate Bipolar Transistor, 50A I(C), 2500V V(BR)CES, N-Channel, 12.40 X 12.40 MM, DIE-2

5SMX12L2505 Parametric

Parameter Name	Attribute value
Parts packaging code	DIE
package instruction	UNCASED CHIP, S-XUUC-N2
Contacts	2
Reach Compliance Code	compli
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	2500 V
Configuration	SINGLE
JESD-30 code	S-XUUC-N2
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Base Number Matches	1

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V

CE

I

C

=

2500 V

50 A

IGBT-Die

5SMX12L2505

Die size: 12.4 * 12.4 mm

Doc. No. 5SYA1610-00 Aug. 01

Low on-state IGBT die

Highly rugged design

• •

Maximum Rated Values

Parameter

Collector-Emitter Voltage

DC Collector Current

Electro Static Discharge

Symbol

V

CES

I

C

ESD

(T

vj

= 25°C, unless specified otherwise)

Conditions

Values

2500

50

Device Sensitive to ESD

Unit

V

A

IGBT Characteristic Values

Parameter

Collector-Emitter Sat.Voltage

Collect.-Emit. leakage Current

Gate-Emitter leakage Current

Gate-Emitter Threshold Voltage

Internal gate resistance

Symbol

V

CE(sat)

I

CES

I

GES

V

GE(TO)

R

Gint

(T

j

= 25°C, unless specified otherwise)

Conditions

I

C

= I

crated

, V

GE

= 15 V

V

CE

= 2500V, V

GE

= 0V, T

vj

=125°C

V

CE

= 0V ,V

GE

=

±20

V

I

C

= 10 mA, V

CE

= V

GE

6

min. typ. max.

1.8

2.65

1

±500

9

Unit

V

mA

nA

V

Ω

Mechanical Characteristics

Parameter

Overall die

Dimensions

L*W

12.4 * 12.4

9.0 * 9.0

1.5 * 1.5

310 +/- 20

AISi1/Al

AISi1 / Ti / Ni / Ag

12

3

Exposed

L*W (except gate pad)

Front metal

Gate pad

Thickness

Metallization

Front

Back

L*W

Unit

mm

µm

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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