5SMX12L2508 datasheet, PDF - EEWORLD Datasheet

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5SMX12L2508: DescriptionInsulated Gate Bipolar Transistor, 50A I(C), 2500V V(BR)CES, N-Channel, 12.40 X 12.40 MM, DIE-2; CategoryDiscrete semiconductor The transistor; File Size90KB，2 Pages; ManufacturerABB; Websitehttp://www.abb.com/

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5SMX12L2508 Overview

Insulated Gate Bipolar Transistor, 50A I(C), 2500V V(BR)CES, N-Channel, 12.40 X 12.40 MM, DIE-2

5SMX12L2508 Parametric

Parameter Name	Attribute value
Parts packaging code	DIE
package instruction	UNCASED CHIP, S-XUUC-N2
Contacts	2
Reach Compliance Code	compli
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	2500 V
Configuration	SINGLE
JESD-30 code	S-XUUC-N2
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Base Number Matches	1

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2500 V

50 A

IGBT-Die

5SMX12L2508

Die size: 12.4 * 12.4 mm

Doc. No. 5SYA1611-00 Aug. 01

Low on-state IGBT die

Highly rugged design

• •

Maximum Rated Values

Parameter

Collector-Emitter Voltage

DC Collector Current

Electro Static Discharge

Symbol

CES

ESD

= 25°C, unless specified otherwise)

Conditions

Values

2500

Device Sensitive to ESD

Unit

IGBT Characteristic Values

Parameter

Collector-Emitter Sat.Voltage

Collect.-Emit. leakage Current

Gate-Emitter leakage Current

Gate-Emitter Threshold Voltage

Internal gate resistance

Symbol

CE(sat)

CES

GES

GE(TO)

Gint

= 25°C, unless specified otherwise)

Conditions

= I

crated

, V

= 15 V

= 2500V, V

= 0V, T

=125°C

= 0V ,V

±20

= 10 mA, V

= V

min. typ. max.

1.8

2.65

±500

Unit

Ω

Mechanical Characteristics

Parameter

Overall die

Dimensions

L*W

12.4 * 12.4

9.0 * 9.0

1.5 * 1.5

310 +/- 20

AISi1/Ti/Ni/Ag

AISi1 / Ti / Ni / Ag

Exposed

L*W (except gate pad)

Front metal

Gate pad

Thickness

Metallization

Front

Back

L*W

Unit

µm

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

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