V
RRM
=
I
F
=
2500 V
108 A
Fast-Diode Die
5SLX 12L2507
Die size: 12.4 x 12.4 mm
Doc. No. 5SYA1667-00 Dec 06
•
•
•
•
Fast and soft reverse-recovery
Low losses
High SOA
Passivation: SIPOS Nitride plus Polyimide
Maximum rated values
Parameter
1)
Symbol
V
RRM
I
F
I
FRM
T
vj
Conditions
min
max
2500
108
Unit
V
A
A
°C
Repetitive peak reverse voltage
Continuous forward current
Repetitive peak forward current
Junction temperature
1)
Limited by T
vjmax
-40
216
125
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values
Parameter
Continuous forward voltage
Continuous reverse current
Peak reverse recovery current
Recovered charge
Reverse recovery time
Reverse recovery energy
2)
2)
Symbol
V
F
I
R
I
rr
Q
rr
t
rr
E
rec
Conditions
I
F
= 108 A
V
R
= 2500 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
I
F
= 108 A,
V
R
= 1250 V,
di/dt = 420 A/µs,
L
σ
= 1200 nH,
Inductive load,
Switch:
2x 5SMX12L2511
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
typ
1.95
1.95
2
1.5
85
110
43
80
600
1020
37
70
max
Unit
V
V
µA
7
mA
A
A
µC
µC
ns
ns
mJ
mJ
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SLX 12L2507
216
189
162
135
I
F
[A]
108
81
125 °C
54
25 °C
27
0
0
0.5
1
1.5
V
F
[V]
2
2.5
3
E
rec
[mJ], Q
rr
[µC], I
rr
[A]
140
120
I
rr
100
Q
rr
80
E
rec
60
40
V
R
= 1250 V
di/dt = 420 A/µs
T
vj
= 125 °C
L
σ
= 1.2 µH
0
54
108
162
IF [A]
216
270
324
20
0
Fig. 1
Typical forward characteristics
Fig. 2
Typical reverse recovery characteristics
vs. forward current
162
V
R
= 1250 V
I
R
= 108 A
di/dt = 420 A/µs
T
vj
= 125 °C
L
σ
= 1.2 µH
0
140
V
R
= 1250 V
I
F
= 108 A
T
vj
= 125 °C
L
σ
= 1.2 µH
108
-200
120
I
rr
E
rec
[mJ], Q
rr
[µC], I
rr
[A]
54
-400
100
I
R
[A]
-162
V
R
-1200
20
-216
0
1
2
3
4
5
time [µs]
-1400
0
0
100
200
300
di/dt [A/µs]
400
500
600
Fig. 3
Typical reverse recovery behaviour
Fig. 4
Typical reverse recovery characteristics
vs. di/dt
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1667-00 Dec 06
page 2 of 3
R
G
= 68 ohm
-108
-1000
40
E
rec
R
G
= 47 ohm
R
G
= 33 ohm
R
G
= 22 ohm
-54
-800
60
R
G
= 16.5 ohm
Q
rr
R
G
= 10 ohm
I
R
V
R
[V]
0
-600
80
5SLX 12L2507
Mechanical properties
Parameter
Overall die L
x
W
Dimensions
exposed
L
x
W
front metal
thickness
Metallization
3)
3)
Unit
12.4 x 12.4
9.48 x 9.48
310
±
20
AlSi1 + TiNiAg
AlSi1 + TiNiAg
4+4
1.8 + 1.2
mm
mm
µm
µm
µm
front (A)
back (K)
For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
12.38
±0.05
10.46
+0.04
9.48
-0
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1667-00 Dec 06
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