8M612L85C datasheet, PDF - EEWORLD Datasheet

8M612L85C: DescriptionSRAM Module, 32KX16, 85ns, CMOS, CDIP40; Categorystorage storage; File Size432KB，8 Pages; ManufacturerIDT (Integrated Device Technology)

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8M612L85C Overview

SRAM Module, 32KX16, 85ns, CMOS, CDIP40

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Reach Compliance Code	_compli
Maximum access time	85 ns
I/O type	COMMON
JESD-30 code	R-XDIP-T40
JESD-609 code	e0
memory density	524288 bi
Memory IC Type	SRAM MODULE
memory width	16
Number of terminals	40
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX16
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP40,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	5 V
Certification status	Not Qualified
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	6
Base Number Matches	1

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