FQB11N40C/FQI11N40C
QFET
FQB11N40C/FQI11N40C
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
®
Features
•
•
•
•
•
•
10.5 A, 400V, R
DS(on)
= 0.5
Ω
@V
GS
= 10 V
Low gate charge ( typical 28 nC)
Low Crss ( typical 85pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
D
!
"
G
S
D
2
-PAK
FQB Series
I
2
-PAK
G D S
FQI Series
G
!
! "
"
"
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQB11N40C / FQI11N40C
400
10.5
6.6
42
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
360
11
13.5
4.5
135
1.07
-55 to +150
300
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
-
-
-
Max
0.93
40
62.5
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
FQB11N40C/FQI11N40C
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 400 V, V
GS
= 0 V
V
DS
= 320 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
400
--
--
--
--
--
--
0.54
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 5.25 A
V
DS
= 40 V, I
D
= 5.25 A
(Note 4)
2.0
--
--
--
0.5
7.1
4.0
0.53
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
840
250
85
1090
325
110
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 320 V, I
D
= 10.5 A,
V
GS
= 10 V
(Note 4, 5)
V
DD
= 200 V, I
D
= 10.5 A,
R
G
= 25
Ω
(Note 4, 5)
--
--
--
--
--
--
--
14
89
81
81
28
4
15
40
190
170
170
35
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 10.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 10.5 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
290
2.4
10.5
42
1.4
--
--
A
A
V
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.7 mH, I
AS
= 10.5A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
10.5A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
FQB11N40C/FQI11N40C
Typical Characteristics
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
10
1
150 C
o
o
25 C
10
0
o
-55 C
10
0
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25℃
※
Notes :
1. V
DS
= 40V
2. 250μ s Pulse Test
10
-1
10
0
10
1
10
-1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.0
V
GS
= 10V
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
1.5
1.0
I
DR
, Reverse Drain Current [A]
10
1
10
0
V
GS
= 20V
0.5
※
Note : T
J
= 25℃
150℃
25℃
-1
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
0
5
10
15
20
25
30
35
40
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
2000
1800
1600
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
10
V
DS
= 100V
V
DS
= 250V
1400
C
iss
C
oss
V
GS
, Gate-Source Voltage [V]
8
Capacitance [pF]
1200
1000
800
600
400
200
0
-1
10
V
DS
= 400V
6
C
rss
※
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
4
2
※
Note : I
D
= 10.5A
0
10
0
10
1
0
5
10
15
20
25
30
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
FQB11N40C/FQI11N40C
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 5.25 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
12
10
2
Operation in This Area
is Limited by R
DS(on)
10
µ
s
100
µ
s
10
I
D
, Drain Current [A]
10
1
10 ms
100 ms
DC
I
D
, Drain Current [A]
1 ms
8
6
10
0
4
※
Notes :
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
2
10
-1
10
0
10
1
10
2
10
3
0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [℃]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
10
0
(t), T h e rm a l R e s p o n s e
D = 0 .5
0 .2
10
-1
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
※
N o te s :
1 . Z
θ
JC
t) = 0 .9 3
℃
/W M a x .
(
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
JM
- T
C
= P
D M
* Z
θ
J C
t)
(
JC
P
DM
t
1
t
2
Z
θ
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
FQB11N40C/FQI11N40C
Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
Q
g
10V
Q
gs
Q
gd
V
GS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
V
DS
V
GS
R
G
R
L
V
DD
V
DS
90%
10V
DUT
V
GS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
I
D
R
G
DUT
t
p
BV
DSS
1
---- L I
AS2
--------------------
E
AS
=
2
BV
DSS
- V
DD
BV
DSS
I
AS
V
DD
V
DD
t
p
I
D
(t)
V
DS
(t)
Time
10V
©2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
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